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Title: Materials Data on InGaAs2 by Materials Project

Abstract

InGaAs2 is Chalcopyrite-like structured and crystallizes in the tetragonal P-4m2 space group. The structure is three-dimensional. In3+ is bonded to four equivalent As3- atoms to form InAs4 tetrahedra that share corners with four equivalent InAs4 tetrahedra and corners with eight equivalent GaAs4 tetrahedra. All In–As bond lengths are 2.65 Å. Ga3+ is bonded to four equivalent As3- atoms to form GaAs4 tetrahedra that share corners with four equivalent GaAs4 tetrahedra and corners with eight equivalent InAs4 tetrahedra. All Ga–As bond lengths are 2.52 Å. As3- is bonded to two equivalent In3+ and two equivalent Ga3+ atoms to form corner-sharing AsIn2Ga2 tetrahedra.

Authors:
Publication Date:
Other Number(s):
mp-1223781
DOE Contract Number:  
AC02-05CH11231; EDCBEE
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Collaborations:
MIT; UC Berkeley; Duke; U Louvain
Subject:
36 MATERIALS SCIENCE
Keywords:
crystal structure; InGaAs2; As-Ga-In
OSTI Identifier:
1687045
DOI:
https://doi.org/10.17188/1687045

Citation Formats

The Materials Project. Materials Data on InGaAs2 by Materials Project. United States: N. p., 2019. Web. doi:10.17188/1687045.
The Materials Project. Materials Data on InGaAs2 by Materials Project. United States. doi:https://doi.org/10.17188/1687045
The Materials Project. 2019. "Materials Data on InGaAs2 by Materials Project". United States. doi:https://doi.org/10.17188/1687045. https://www.osti.gov/servlets/purl/1687045. Pub date:Sun Jan 13 00:00:00 EST 2019
@article{osti_1687045,
title = {Materials Data on InGaAs2 by Materials Project},
author = {The Materials Project},
abstractNote = {InGaAs2 is Chalcopyrite-like structured and crystallizes in the tetragonal P-4m2 space group. The structure is three-dimensional. In3+ is bonded to four equivalent As3- atoms to form InAs4 tetrahedra that share corners with four equivalent InAs4 tetrahedra and corners with eight equivalent GaAs4 tetrahedra. All In–As bond lengths are 2.65 Å. Ga3+ is bonded to four equivalent As3- atoms to form GaAs4 tetrahedra that share corners with four equivalent GaAs4 tetrahedra and corners with eight equivalent InAs4 tetrahedra. All Ga–As bond lengths are 2.52 Å. As3- is bonded to two equivalent In3+ and two equivalent Ga3+ atoms to form corner-sharing AsIn2Ga2 tetrahedra.},
doi = {10.17188/1687045},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {1}
}