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Title: Materials Data on GaN by Materials Project

Abstract

Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

Publication Date:
Other Number(s):
mp-1244896
DOE Contract Number:  
AC02-05CH11231; EDCBEE
Product Type:
Dataset
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Subject:
36 MATERIALS SCIENCE
Keywords:
crystal structure; GaN; Ga-N
OSTI Identifier:
1684118
DOI:
https://doi.org/10.17188/1684118

Citation Formats

The Materials Project. Materials Data on GaN by Materials Project. United States: N. p., 2019. Web. doi:10.17188/1684118.
The Materials Project. Materials Data on GaN by Materials Project. United States. doi:https://doi.org/10.17188/1684118
The Materials Project. 2019. "Materials Data on GaN by Materials Project". United States. doi:https://doi.org/10.17188/1684118. https://www.osti.gov/servlets/purl/1684118. Pub date:Tue Jul 02 00:00:00 EDT 2019
@article{osti_1684118,
title = {Materials Data on GaN by Materials Project},
author = {The Materials Project},
abstractNote = {Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations},
doi = {10.17188/1684118},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {7}
}

Works referenced in this record:

Morphology and photoluminescence of ZnO nanorods grown on sputtered GaN films with intermediate ZnO seed layer
journal, October 2016


Critical issues for interfaces to p-type SiC and GaN in power devices
journal, August 2012