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Title: Materials Data on V2O5 by Materials Project

Abstract

Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

Authors:
Publication Date:
Other Number(s):
mp-25233
DOE Contract Number:  
AC02-05CH11231; EDCBEE
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Collaborations:
MIT; UC Berkeley; Duke; U Louvain
Subject:
36 MATERIALS SCIENCE
Keywords:
crystal structure; V2O5; O-V
OSTI Identifier:
1672638
DOI:
https://doi.org/10.17188/1672638

Citation Formats

The Materials Project. Materials Data on V2O5 by Materials Project. United States: N. p., 2020. Web. doi:10.17188/1672638.
The Materials Project. Materials Data on V2O5 by Materials Project. United States. doi:https://doi.org/10.17188/1672638
The Materials Project. 2020. "Materials Data on V2O5 by Materials Project". United States. doi:https://doi.org/10.17188/1672638. https://www.osti.gov/servlets/purl/1672638. Pub date:Mon May 04 00:00:00 EDT 2020
@article{osti_1672638,
title = {Materials Data on V2O5 by Materials Project},
author = {The Materials Project},
abstractNote = {Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations},
doi = {10.17188/1672638},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {5}
}

Works referenced in this record:

High sensitivity extended gate effect transistor based on V2O5 nanorods
journal, September 2016


Effect of vanadium doping on sintering and dielectric properties of strontium barium niobate ceramics
journal, April 2009