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Title: Materials Data on InGaSb2 by Materials Project

Abstract

InGaSb2 is Chalcopyrite-like structured and crystallizes in the tetragonal P-4m2 space group. The structure is three-dimensional. In3+ is bonded to four equivalent Sb3- atoms to form InSb4 tetrahedra that share corners with four equivalent InSb4 tetrahedra and corners with eight equivalent GaSb4 tetrahedra. All In–Sb bond lengths are 2.85 Å. Ga3+ is bonded to four equivalent Sb3- atoms to form GaSb4 tetrahedra that share corners with four equivalent GaSb4 tetrahedra and corners with eight equivalent InSb4 tetrahedra. All Ga–Sb bond lengths are 2.73 Å. Sb3- is bonded to two equivalent In3+ and two equivalent Ga3+ atoms to form corner-sharing SbIn2Ga2 tetrahedra.

Authors:
Publication Date:
Other Number(s):
mp-1223638
DOE Contract Number:  
AC02-05CH11231; EDCBEE
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Collaborations:
MIT; UC Berkeley; Duke; U Louvain
Subject:
36 MATERIALS SCIENCE
Keywords:
crystal structure; InGaSb2; Ga-In-Sb
OSTI Identifier:
1666961
DOI:
https://doi.org/10.17188/1666961

Citation Formats

The Materials Project. Materials Data on InGaSb2 by Materials Project. United States: N. p., 2020. Web. doi:10.17188/1666961.
The Materials Project. Materials Data on InGaSb2 by Materials Project. United States. doi:https://doi.org/10.17188/1666961
The Materials Project. 2020. "Materials Data on InGaSb2 by Materials Project". United States. doi:https://doi.org/10.17188/1666961. https://www.osti.gov/servlets/purl/1666961. Pub date:Thu Jul 23 00:00:00 EDT 2020
@article{osti_1666961,
title = {Materials Data on InGaSb2 by Materials Project},
author = {The Materials Project},
abstractNote = {InGaSb2 is Chalcopyrite-like structured and crystallizes in the tetragonal P-4m2 space group. The structure is three-dimensional. In3+ is bonded to four equivalent Sb3- atoms to form InSb4 tetrahedra that share corners with four equivalent InSb4 tetrahedra and corners with eight equivalent GaSb4 tetrahedra. All In–Sb bond lengths are 2.85 Å. Ga3+ is bonded to four equivalent Sb3- atoms to form GaSb4 tetrahedra that share corners with four equivalent GaSb4 tetrahedra and corners with eight equivalent InSb4 tetrahedra. All Ga–Sb bond lengths are 2.73 Å. Sb3- is bonded to two equivalent In3+ and two equivalent Ga3+ atoms to form corner-sharing SbIn2Ga2 tetrahedra.},
doi = {10.17188/1666961},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {7}
}