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Title: Materials Data on DyCo5Si3 by Materials Project

Abstract

DyCo5Si3 crystallizes in the hexagonal P6_3/m space group. The structure is three-dimensional. Dy3+ is bonded to six Si4- atoms to form distorted DySi6 pentagonal pyramids that share corners with six CoSi4 tetrahedra, edges with nine CoSi4 tetrahedra, and faces with two equivalent DySi6 pentagonal pyramids. There are a spread of Dy–Si bond distances ranging from 2.90–2.94 Å. There are five inequivalent Co+1.80+ sites. In the first Co+1.80+ site, Co+1.80+ is bonded to four Si4- atoms to form CoSi4 tetrahedra that share corners with two equivalent DySi6 pentagonal pyramids, corners with eight CoSi4 tetrahedra, edges with three equivalent DySi6 pentagonal pyramids, and edges with three CoSi4 tetrahedra. There are a spread of Co–Si bond distances ranging from 2.31–2.34 Å. In the second Co+1.80+ site, Co+1.80+ is bonded to four Si4- atoms to form CoSi4 tetrahedra that share corners with two equivalent DySi6 pentagonal pyramids, corners with ten CoSi4 tetrahedra, edges with three equivalent DySi6 pentagonal pyramids, and edges with three CoSi4 tetrahedra. There are a spread of Co–Si bond distances ranging from 2.29–2.32 Å. In the third Co+1.80+ site, Co+1.80+ is bonded in a trigonal non-coplanar geometry to three equivalent Si4- atoms. There are one shorter (2.25 Å) and two longermore » (2.40 Å) Co–Si bond lengths. In the fourth Co+1.80+ site, Co+1.80+ is bonded in a 5-coordinate geometry to five Si4- atoms. There are a spread of Co–Si bond distances ranging from 2.26–2.38 Å. In the fifth Co+1.80+ site, Co+1.80+ is bonded to four Si4- atoms to form CoSi4 tetrahedra that share corners with two equivalent DySi6 pentagonal pyramids, corners with ten CoSi4 tetrahedra, edges with three equivalent DySi6 pentagonal pyramids, and edges with two equivalent CoSi4 tetrahedra. There are three shorter (2.29 Å) and one longer (2.32 Å) Co–Si bond lengths. There are three inequivalent Si4- sites. In the first Si4- site, Si4- is bonded in a 10-coordinate geometry to two equivalent Dy3+, six Co+1.80+, and two equivalent Si4- atoms. Both Si–Si bond lengths are 2.62 Å. In the second Si4- site, Si4- is bonded in a 9-coordinate geometry to two equivalent Dy3+ and seven Co+1.80+ atoms. In the third Si4- site, Si4- is bonded in a 9-coordinate geometry to two equivalent Dy3+ and seven Co+1.80+ atoms.« less

Authors:
Publication Date:
Other Number(s):
mp-1213253
DOE Contract Number:  
AC02-05CH11231; EDCBEE
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Collaborations:
MIT; UC Berkeley; Duke; U Louvain
Subject:
36 MATERIALS SCIENCE
Keywords:
crystal structure; DyCo5Si3; Co-Dy-Si
OSTI Identifier:
1654878
DOI:
https://doi.org/10.17188/1654878

Citation Formats

The Materials Project. Materials Data on DyCo5Si3 by Materials Project. United States: N. p., 2019. Web. doi:10.17188/1654878.
The Materials Project. Materials Data on DyCo5Si3 by Materials Project. United States. doi:https://doi.org/10.17188/1654878
The Materials Project. 2019. "Materials Data on DyCo5Si3 by Materials Project". United States. doi:https://doi.org/10.17188/1654878. https://www.osti.gov/servlets/purl/1654878. Pub date:Sat Jan 12 00:00:00 EST 2019
@article{osti_1654878,
title = {Materials Data on DyCo5Si3 by Materials Project},
author = {The Materials Project},
abstractNote = {DyCo5Si3 crystallizes in the hexagonal P6_3/m space group. The structure is three-dimensional. Dy3+ is bonded to six Si4- atoms to form distorted DySi6 pentagonal pyramids that share corners with six CoSi4 tetrahedra, edges with nine CoSi4 tetrahedra, and faces with two equivalent DySi6 pentagonal pyramids. There are a spread of Dy–Si bond distances ranging from 2.90–2.94 Å. There are five inequivalent Co+1.80+ sites. In the first Co+1.80+ site, Co+1.80+ is bonded to four Si4- atoms to form CoSi4 tetrahedra that share corners with two equivalent DySi6 pentagonal pyramids, corners with eight CoSi4 tetrahedra, edges with three equivalent DySi6 pentagonal pyramids, and edges with three CoSi4 tetrahedra. There are a spread of Co–Si bond distances ranging from 2.31–2.34 Å. In the second Co+1.80+ site, Co+1.80+ is bonded to four Si4- atoms to form CoSi4 tetrahedra that share corners with two equivalent DySi6 pentagonal pyramids, corners with ten CoSi4 tetrahedra, edges with three equivalent DySi6 pentagonal pyramids, and edges with three CoSi4 tetrahedra. There are a spread of Co–Si bond distances ranging from 2.29–2.32 Å. In the third Co+1.80+ site, Co+1.80+ is bonded in a trigonal non-coplanar geometry to three equivalent Si4- atoms. There are one shorter (2.25 Å) and two longer (2.40 Å) Co–Si bond lengths. In the fourth Co+1.80+ site, Co+1.80+ is bonded in a 5-coordinate geometry to five Si4- atoms. There are a spread of Co–Si bond distances ranging from 2.26–2.38 Å. In the fifth Co+1.80+ site, Co+1.80+ is bonded to four Si4- atoms to form CoSi4 tetrahedra that share corners with two equivalent DySi6 pentagonal pyramids, corners with ten CoSi4 tetrahedra, edges with three equivalent DySi6 pentagonal pyramids, and edges with two equivalent CoSi4 tetrahedra. There are three shorter (2.29 Å) and one longer (2.32 Å) Co–Si bond lengths. There are three inequivalent Si4- sites. In the first Si4- site, Si4- is bonded in a 10-coordinate geometry to two equivalent Dy3+, six Co+1.80+, and two equivalent Si4- atoms. Both Si–Si bond lengths are 2.62 Å. In the second Si4- site, Si4- is bonded in a 9-coordinate geometry to two equivalent Dy3+ and seven Co+1.80+ atoms. In the third Si4- site, Si4- is bonded in a 9-coordinate geometry to two equivalent Dy3+ and seven Co+1.80+ atoms.},
doi = {10.17188/1654878},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {1}
}