Materials Data on Tb2Sc3Si4 by Materials Project

doi:10.17188/1652659

Title: Materials Data on Tb2Sc3Si4 by Materials Project

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Abstract

Tb2Sc3Si4 crystallizes in the orthorhombic Pnma space group. The structure is three-dimensional. Tb+3.50+ is bonded to seven Si4- atoms to form distorted TbSi7 pentagonal bipyramids that share corners with four equivalent ScSi6 octahedra, corners with six equivalent TbSi7 pentagonal bipyramids, corners with five equivalent ScSi6 pentagonal pyramids, edges with two equivalent TbSi7 pentagonal bipyramids, edges with three equivalent ScSi6 pentagonal pyramids, faces with two equivalent ScSi6 octahedra, faces with three equivalent TbSi7 pentagonal bipyramids, and faces with three equivalent ScSi6 pentagonal pyramids. The corner-sharing octahedra tilt angles range from 45–54°. There are a spread of Tb–Si bond distances ranging from 2.94–3.34 Å. There are two inequivalent Sc3+ sites. In the first Sc3+ site, Sc3+ is bonded to six Si4- atoms to form ScSi6 octahedra that share corners with four equivalent ScSi6 octahedra, corners with eight equivalent TbSi7 pentagonal bipyramids, corners with six equivalent ScSi6 pentagonal pyramids, faces with four equivalent TbSi7 pentagonal bipyramids, and faces with four equivalent ScSi6 pentagonal pyramids. The corner-sharing octahedral tilt angles are 53°. There are a spread of Sc–Si bond distances ranging from 2.80–2.97 Å. In the second Sc3+ site, Sc3+ is bonded to six Si4- atoms to form distorted ScSi6 pentagonal pyramids that sharemore »« less

Authors:: The Materials Project

Publication Date:: 2020-07-15

Other Number(s):: mp-1208563

DOE Contract Number:: AC02-05CH11231; EDCBEE

Research Org.:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Collaborations:: MIT; UC Berkeley; Duke; U Louvain

Subject:: 36 MATERIALS SCIENCE

Keywords:: crystal structure; Tb2Sc3Si4; Sc-Si-Tb

OSTI Identifier:: 1652659

DOI:: https://doi.org/10.17188/1652659

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                    The Materials Project. Materials Data on Tb2Sc3Si4 by Materials Project.  United States: N. p., 2020. 
        Web.  doi:10.17188/1652659.

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                    The Materials Project. Materials Data on Tb2Sc3Si4 by Materials Project.  United States.  doi:https://doi.org/10.17188/1652659

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                    The Materials Project. 2020.  
"Materials Data on Tb2Sc3Si4 by Materials Project".  United States.  doi:https://doi.org/10.17188/1652659.  https://www.osti.gov/servlets/purl/1652659. Pub date:Wed Jul 15 00:00:00 EDT 2020

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@article{osti_1652659,

  title        = {Materials Data on Tb2Sc3Si4 by Materials Project},

  author       = {The Materials Project},

  abstractNote = {Tb2Sc3Si4 crystallizes in the orthorhombic Pnma space group. The structure is three-dimensional. Tb+3.50+ is bonded to seven Si4- atoms to form distorted TbSi7 pentagonal bipyramids that share corners with four equivalent ScSi6 octahedra, corners with six equivalent TbSi7 pentagonal bipyramids, corners with five equivalent ScSi6 pentagonal pyramids, edges with two equivalent TbSi7 pentagonal bipyramids, edges with three equivalent ScSi6 pentagonal pyramids, faces with two equivalent ScSi6 octahedra, faces with three equivalent TbSi7 pentagonal bipyramids, and faces with three equivalent ScSi6 pentagonal pyramids. The corner-sharing octahedra tilt angles range from 45–54°. There are a spread of Tb–Si bond distances ranging from 2.94–3.34 Å. There are two inequivalent Sc3+ sites. In the first Sc3+ site, Sc3+ is bonded to six Si4- atoms to form ScSi6 octahedra that share corners with four equivalent ScSi6 octahedra, corners with eight equivalent TbSi7 pentagonal bipyramids, corners with six equivalent ScSi6 pentagonal pyramids, faces with four equivalent TbSi7 pentagonal bipyramids, and faces with four equivalent ScSi6 pentagonal pyramids. The corner-sharing octahedral tilt angles are 53°. There are a spread of Sc–Si bond distances ranging from 2.80–2.97 Å. In the second Sc3+ site, Sc3+ is bonded to six Si4- atoms to form distorted ScSi6 pentagonal pyramids that share corners with three equivalent ScSi6 octahedra, corners with five equivalent TbSi7 pentagonal bipyramids, corners with four equivalent ScSi6 pentagonal pyramids, edges with three equivalent TbSi7 pentagonal bipyramids, edges with three equivalent ScSi6 pentagonal pyramids, faces with two equivalent ScSi6 octahedra, faces with three equivalent TbSi7 pentagonal bipyramids, and a faceface with one ScSi6 pentagonal pyramid. The corner-sharing octahedra tilt angles range from 39–40°. There are a spread of Sc–Si bond distances ranging from 2.73–2.85 Å. There are three inequivalent Si4- sites. In the first Si4- site, Si4- is bonded in a 9-coordinate geometry to two equivalent Tb+3.50+, six Sc3+, and one Si4- atom. The Si–Si bond length is 2.55 Å. In the second Si4- site, Si4- is bonded in a 9-coordinate geometry to four equivalent Tb+3.50+, four Sc3+, and one Si4- atom. In the third Si4- site, Si4- is bonded in a 9-coordinate geometry to four equivalent Tb+3.50+, four Sc3+, and one Si4- atom. The Si–Si bond length is 2.54 Å.},

  doi          = {10.17188/1652659},

  journal      = {},

  number       = ,

  volume       = ,

  place        = {United States},

  year         = {2020},

  month        = {7}

}

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DOI: https://doi.org/10.17188/1652659

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