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Title: Materials Data on GaAs by Materials Project

Abstract

GaAs is High Pressure Cadmuum Telluride structured and crystallizes in the orthorhombic Pmm2 space group. The structure is three-dimensional. Ga3+ is bonded in a distorted bent 150 degrees geometry to two equivalent As3- atoms. Both Ga–As bond lengths are 2.82 Å. As3- is bonded in a 6-coordinate geometry to two equivalent Ga3+ and four equivalent As3- atoms. There are two shorter (2.68 Å) and two longer (2.82 Å) As–As bond lengths.

Publication Date:
Other Number(s):
mp-1059094
DOE Contract Number:  
AC02-05CH11231; EDCBEE
Product Type:
Dataset
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Subject:
36 MATERIALS SCIENCE
Keywords:
crystal structure; GaAs; As-Ga
OSTI Identifier:
1651780
DOI:
https://doi.org/10.17188/1651780

Citation Formats

The Materials Project. Materials Data on GaAs by Materials Project. United States: N. p., 2020. Web. doi:10.17188/1651780.
The Materials Project. Materials Data on GaAs by Materials Project. United States. doi:https://doi.org/10.17188/1651780
The Materials Project. 2020. "Materials Data on GaAs by Materials Project". United States. doi:https://doi.org/10.17188/1651780. https://www.osti.gov/servlets/purl/1651780. Pub date:Wed Jul 15 00:00:00 EDT 2020
@article{osti_1651780,
title = {Materials Data on GaAs by Materials Project},
author = {The Materials Project},
abstractNote = {GaAs is High Pressure Cadmuum Telluride structured and crystallizes in the orthorhombic Pmm2 space group. The structure is three-dimensional. Ga3+ is bonded in a distorted bent 150 degrees geometry to two equivalent As3- atoms. Both Ga–As bond lengths are 2.82 Å. As3- is bonded in a 6-coordinate geometry to two equivalent Ga3+ and four equivalent As3- atoms. There are two shorter (2.68 Å) and two longer (2.82 Å) As–As bond lengths.},
doi = {10.17188/1651780},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {7}
}

Works referenced in this record:

Impact of ZnTe buffer on the electrical properties of n-type GaSb:Te films
journal, November 2009


Raman scattering from InGaAs/GaAs quantum dot structures grown by atomic layer molecular beam epitaxy
journal, February 2005