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Title: Materials Data on Ga2BiAs by Materials Project

Abstract

Ga2BiAs is Enargite-like structured and crystallizes in the tetragonal P-4m2 space group. The structure is three-dimensional. Ga is bonded to two equivalent Bi and two equivalent As atoms to form corner-sharing GaBi2As2 tetrahedra. Both Ga–Bi bond lengths are 2.73 Å. Both Ga–As bond lengths are 2.56 Å. Bi is bonded to four equivalent Ga atoms to form BiGa4 tetrahedra that share corners with four equivalent BiGa4 tetrahedra and corners with eight equivalent AsGa4 tetrahedra. As is bonded to four equivalent Ga atoms to form AsGa4 tetrahedra that share corners with four equivalent AsGa4 tetrahedra and corners with eight equivalent BiGa4 tetrahedra.

Publication Date:
Other Number(s):
mp-1018076
DOE Contract Number:  
AC02-05CH11231
Research Org.:
LBNL Materials Project; Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Collaborations:
The Materials Project; MIT; UC Berkeley; Duke; U Louvain
Subject:
36 MATERIALS SCIENCE; As-Bi-Ga; Ga2BiAs; crystal structure
OSTI Identifier:
1350243
DOI:
https://doi.org/10.17188/1350243

Citation Formats

Materials Data on Ga2BiAs by Materials Project. United States: N. p., 2020. Web. doi:10.17188/1350243.
Materials Data on Ga2BiAs by Materials Project. United States. doi:https://doi.org/10.17188/1350243
2020. "Materials Data on Ga2BiAs by Materials Project". United States. doi:https://doi.org/10.17188/1350243. https://www.osti.gov/servlets/purl/1350243. Pub date:Mon Jul 20 00:00:00 EDT 2020
@article{osti_1350243,
title = {Materials Data on Ga2BiAs by Materials Project},
abstractNote = {Ga2BiAs is Enargite-like structured and crystallizes in the tetragonal P-4m2 space group. The structure is three-dimensional. Ga is bonded to two equivalent Bi and two equivalent As atoms to form corner-sharing GaBi2As2 tetrahedra. Both Ga–Bi bond lengths are 2.73 Å. Both Ga–As bond lengths are 2.56 Å. Bi is bonded to four equivalent Ga atoms to form BiGa4 tetrahedra that share corners with four equivalent BiGa4 tetrahedra and corners with eight equivalent AsGa4 tetrahedra. As is bonded to four equivalent Ga atoms to form AsGa4 tetrahedra that share corners with four equivalent AsGa4 tetrahedra and corners with eight equivalent BiGa4 tetrahedra.},
doi = {10.17188/1350243},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {7}
}