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Title: Materials Data on AlGaN2 by Materials Project

Abstract

GaAlN2 is Chalcopyrite-like structured and crystallizes in the tetragonal P-4m2 space group. The structure is three-dimensional. Ga3+ is bonded to four equivalent N3- atoms to form GaN4 tetrahedra that share corners with four equivalent GaN4 tetrahedra and corners with eight equivalent AlN4 tetrahedra. All Ga–N bond lengths are 1.97 Å. Al3+ is bonded to four equivalent N3- atoms to form AlN4 tetrahedra that share corners with four equivalent AlN4 tetrahedra and corners with eight equivalent GaN4 tetrahedra. All Al–N bond lengths are 1.91 Å. N3- is bonded to two equivalent Ga3+ and two equivalent Al3+ atoms to form corner-sharing NAl2Ga2 tetrahedra.

Authors:
Publication Date:
Other Number(s):
mp-1008556
DOE Contract Number:  
AC02-05CH11231; EDCBEE
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Collaborations:
MIT; UC Berkeley; Duke; U Louvain
Subject:
36 MATERIALS SCIENCE
Keywords:
crystal structure; AlGaN2; Al-Ga-N
OSTI Identifier:
1325074
DOI:
https://doi.org/10.17188/1325074

Citation Formats

The Materials Project. Materials Data on AlGaN2 by Materials Project. United States: N. p., 2020. Web. doi:10.17188/1325074.
The Materials Project. Materials Data on AlGaN2 by Materials Project. United States. doi:https://doi.org/10.17188/1325074
The Materials Project. 2020. "Materials Data on AlGaN2 by Materials Project". United States. doi:https://doi.org/10.17188/1325074. https://www.osti.gov/servlets/purl/1325074. Pub date:Fri Jul 24 00:00:00 EDT 2020
@article{osti_1325074,
title = {Materials Data on AlGaN2 by Materials Project},
author = {The Materials Project},
abstractNote = {GaAlN2 is Chalcopyrite-like structured and crystallizes in the tetragonal P-4m2 space group. The structure is three-dimensional. Ga3+ is bonded to four equivalent N3- atoms to form GaN4 tetrahedra that share corners with four equivalent GaN4 tetrahedra and corners with eight equivalent AlN4 tetrahedra. All Ga–N bond lengths are 1.97 Å. Al3+ is bonded to four equivalent N3- atoms to form AlN4 tetrahedra that share corners with four equivalent AlN4 tetrahedra and corners with eight equivalent GaN4 tetrahedra. All Al–N bond lengths are 1.91 Å. N3- is bonded to two equivalent Ga3+ and two equivalent Al3+ atoms to form corner-sharing NAl2Ga2 tetrahedra.},
doi = {10.17188/1325074},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {7}
}