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Title: Materials Data on SrGaSiH by Materials Project

Abstract

SrGaSiH crystallizes in the trigonal P3m1 space group. The structure is three-dimensional. Sr2+ is bonded in a distorted trigonal planar geometry to three equivalent Si4- and three equivalent H1- atoms. All Sr–Si bond lengths are 3.28 Å. All Sr–H bond lengths are 2.47 Å. Ga3+ is bonded in a distorted single-bond geometry to three equivalent Si4- and one H1- atom. All Ga–Si bond lengths are 2.48 Å. The Ga–H bond length is 1.78 Å. Si4- is bonded in a 6-coordinate geometry to three equivalent Sr2+ and three equivalent Ga3+ atoms. H1- is bonded to three equivalent Sr2+ and one Ga3+ atom to form distorted corner-sharing HSr3Ga trigonal pyramids.

Authors:
Publication Date:
Other Number(s):
mp-979137
DOE Contract Number:  
AC02-05CH11231; EDCBEE
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Collaborations:
MIT; UC Berkeley; Duke; U Louvain
Subject:
36 MATERIALS SCIENCE
Keywords:
crystal structure; SrGaSiH; Ga-H-Si-Sr
OSTI Identifier:
1316093
DOI:
https://doi.org/10.17188/1316093

Citation Formats

The Materials Project. Materials Data on SrGaSiH by Materials Project. United States: N. p., 2020. Web. doi:10.17188/1316093.
The Materials Project. Materials Data on SrGaSiH by Materials Project. United States. doi:https://doi.org/10.17188/1316093
The Materials Project. 2020. "Materials Data on SrGaSiH by Materials Project". United States. doi:https://doi.org/10.17188/1316093. https://www.osti.gov/servlets/purl/1316093. Pub date:Fri Jul 24 00:00:00 EDT 2020
@article{osti_1316093,
title = {Materials Data on SrGaSiH by Materials Project},
author = {The Materials Project},
abstractNote = {SrGaSiH crystallizes in the trigonal P3m1 space group. The structure is three-dimensional. Sr2+ is bonded in a distorted trigonal planar geometry to three equivalent Si4- and three equivalent H1- atoms. All Sr–Si bond lengths are 3.28 Å. All Sr–H bond lengths are 2.47 Å. Ga3+ is bonded in a distorted single-bond geometry to three equivalent Si4- and one H1- atom. All Ga–Si bond lengths are 2.48 Å. The Ga–H bond length is 1.78 Å. Si4- is bonded in a 6-coordinate geometry to three equivalent Sr2+ and three equivalent Ga3+ atoms. H1- is bonded to three equivalent Sr2+ and one Ga3+ atom to form distorted corner-sharing HSr3Ga trigonal pyramids.},
doi = {10.17188/1316093},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jul 24 00:00:00 EDT 2020},
month = {Fri Jul 24 00:00:00 EDT 2020}
}