Materials Data on SiH10(O2F3)2 by Materials Project

doi:10.17188/1287431

Title: Materials Data on SiH10(O2F3)2 by Materials Project

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Abstract

SiH10(O2F3)2 crystallizes in the monoclinic P2_1/c space group. The structure is zero-dimensional and consists of two SiH10(O2F3)2 clusters. Si4+ is bonded in an octahedral geometry to six F1- atoms. There are a spread of Si–F bond distances ranging from 1.69–1.74 Å. There are five inequivalent H1+ sites. In the first H1+ site, H1+ is bonded in a distorted single-bond geometry to one O2- and one F1- atom. The H–O bond length is 1.00 Å. The H–F bond length is 1.61 Å. In the second H1+ site, H1+ is bonded in a single-bond geometry to one O2- atom. The H–O bond length is 1.00 Å. In the third H1+ site, H1+ is bonded in a linear geometry to two O2- atoms. There is one shorter (1.14 Å) and one longer (1.29 Å) H–O bond length. In the fourth H1+ site, H1+ is bonded in a single-bond geometry to one O2- atom. The H–O bond length is 0.98 Å. In the fifth H1+ site, H1+ is bonded in a single-bond geometry to one O2- atom. The H–O bond length is 0.99 Å. There are two inequivalent O2- sites. In the first O2- site, O2- is bonded in a trigonal non-coplanar geometry tomore »« less

Publication Date:: 2020-07-20

Other Number(s):: mp-722246

DOE Contract Number:: AC02-05CH11231

Research Org.:: LBNL Materials Project; Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Collaborations:: The Materials Project; MIT; UC Berkeley; Duke; U Louvain

Subject:: 36 MATERIALS SCIENCE; F-H-O-Si; SiH10(O2F3)2; crystal structure

OSTI Identifier:: 1287431

DOI:: https://doi.org/10.17188/1287431

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                    Materials Data on SiH10(O2F3)2 by Materials Project.  United States: N. p., 2020. 
        Web.  doi:10.17188/1287431.

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                    Materials Data on SiH10(O2F3)2 by Materials Project.  United States.  doi:https://doi.org/10.17188/1287431

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                    2020.  
"Materials Data on SiH10(O2F3)2 by Materials Project".  United States.  doi:https://doi.org/10.17188/1287431.  https://www.osti.gov/servlets/purl/1287431. Pub date:Mon Jul 20 00:00:00 EDT 2020

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@article{osti_1287431,

  title        = {Materials Data on SiH10(O2F3)2 by Materials Project},

  
  abstractNote = {SiH10(O2F3)2 crystallizes in the monoclinic P2_1/c space group. The structure is zero-dimensional and consists of two SiH10(O2F3)2 clusters. Si4+ is bonded in an octahedral geometry to six F1- atoms. There are a spread of Si–F bond distances ranging from 1.69–1.74 Å. There are five inequivalent H1+ sites. In the first H1+ site, H1+ is bonded in a distorted single-bond geometry to one O2- and one F1- atom. The H–O bond length is 1.00 Å. The H–F bond length is 1.61 Å. In the second H1+ site, H1+ is bonded in a single-bond geometry to one O2- atom. The H–O bond length is 1.00 Å. In the third H1+ site, H1+ is bonded in a linear geometry to two O2- atoms. There is one shorter (1.14 Å) and one longer (1.29 Å) H–O bond length. In the fourth H1+ site, H1+ is bonded in a single-bond geometry to one O2- atom. The H–O bond length is 0.98 Å. In the fifth H1+ site, H1+ is bonded in a single-bond geometry to one O2- atom. The H–O bond length is 0.99 Å. There are two inequivalent O2- sites. In the first O2- site, O2- is bonded in a trigonal non-coplanar geometry to three H1+ atoms. In the second O2- site, O2- is bonded in a trigonal non-coplanar geometry to three H1+ atoms. There are three inequivalent F1- sites. In the first F1- site, F1- is bonded in a single-bond geometry to one Si4+ atom. In the second F1- site, F1- is bonded in a distorted single-bond geometry to one Si4+ atom. In the third F1- site, F1- is bonded in a distorted bent 120 degrees geometry to one Si4+ and one H1+ atom.},

  doi          = {10.17188/1287431},

  journal      = {},

  number       = ,

  volume       = ,

  place        = {United States},

  year         = {2020},

  month        = {7}

}

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DOI: https://doi.org/10.17188/1287431

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