DOE Data Explorer title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Materials Data on SiHC3O by Materials Project

Abstract

SiC3HO crystallizes in the monoclinic P2_1/c space group. The structure is zero-dimensional and consists of four (dimethylsilyl)methanol molecules and eight SiC3HO clusters. In four of the SiC3HO clusters, Si4+ is bonded in a 4-coordinate geometry to three C1- and one H1+ atom. There are a spread of Si–C bond distances ranging from 1.80–1.86 Å. The Si–H bond length is 1.48 Å. There are three inequivalent C1- sites. In the first C1- site, C1- is bonded in a 2-coordinate geometry to one Si4+ and one C1- atom. The C–C bond length is 1.29 Å. In the second C1- site, C1- is bonded in a 2-coordinate geometry to one Si4+ and one C1- atom. In the third C1- site, C1- is bonded in a linear geometry to one Si4+ and one O2- atom. The C–O bond length is 1.17 Å. H1+ is bonded in a single-bond geometry to one Si4+ atom. O2- is bonded in a single-bond geometry to one C1- atom. In four of the SiC3HO clusters, Si4+ is bonded in a rectangular see-saw-like geometry to three C1- and one H1+ atom. There are a spread of Si–C bond distances ranging from 1.83–1.85 Å. The Si–H bond length is 1.48 Å.more » There are three inequivalent C1- sites. In the first C1- site, C1- is bonded in a 2-coordinate geometry to one Si4+ and one C1- atom. The C–C bond length is 1.29 Å. In the second C1- site, C1- is bonded in a 2-coordinate geometry to one Si4+ and one C1- atom. In the third C1- site, C1- is bonded in a distorted linear geometry to one Si4+ and one O2- atom. The C–O bond length is 1.16 Å. H1+ is bonded in a single-bond geometry to one Si4+ atom. O2- is bonded in a single-bond geometry to one C1- atom.« less

Authors:
Publication Date:
Other Number(s):
mp-698558
DOE Contract Number:  
AC02-05CH11231; EDCBEE
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Collaborations:
MIT; UC Berkeley; Duke; U Louvain
Subject:
36 MATERIALS SCIENCE
Keywords:
crystal structure; SiHC3O; C-H-O-Si
OSTI Identifier:
1285370
DOI:
https://doi.org/10.17188/1285370

Citation Formats

The Materials Project. Materials Data on SiHC3O by Materials Project. United States: N. p., 2017. Web. doi:10.17188/1285370.
The Materials Project. Materials Data on SiHC3O by Materials Project. United States. doi:https://doi.org/10.17188/1285370
The Materials Project. 2017. "Materials Data on SiHC3O by Materials Project". United States. doi:https://doi.org/10.17188/1285370. https://www.osti.gov/servlets/purl/1285370. Pub date:Fri Jun 23 00:00:00 EDT 2017
@article{osti_1285370,
title = {Materials Data on SiHC3O by Materials Project},
author = {The Materials Project},
abstractNote = {SiC3HO crystallizes in the monoclinic P2_1/c space group. The structure is zero-dimensional and consists of four (dimethylsilyl)methanol molecules and eight SiC3HO clusters. In four of the SiC3HO clusters, Si4+ is bonded in a 4-coordinate geometry to three C1- and one H1+ atom. There are a spread of Si–C bond distances ranging from 1.80–1.86 Å. The Si–H bond length is 1.48 Å. There are three inequivalent C1- sites. In the first C1- site, C1- is bonded in a 2-coordinate geometry to one Si4+ and one C1- atom. The C–C bond length is 1.29 Å. In the second C1- site, C1- is bonded in a 2-coordinate geometry to one Si4+ and one C1- atom. In the third C1- site, C1- is bonded in a linear geometry to one Si4+ and one O2- atom. The C–O bond length is 1.17 Å. H1+ is bonded in a single-bond geometry to one Si4+ atom. O2- is bonded in a single-bond geometry to one C1- atom. In four of the SiC3HO clusters, Si4+ is bonded in a rectangular see-saw-like geometry to three C1- and one H1+ atom. There are a spread of Si–C bond distances ranging from 1.83–1.85 Å. The Si–H bond length is 1.48 Å. There are three inequivalent C1- sites. In the first C1- site, C1- is bonded in a 2-coordinate geometry to one Si4+ and one C1- atom. The C–C bond length is 1.29 Å. In the second C1- site, C1- is bonded in a 2-coordinate geometry to one Si4+ and one C1- atom. In the third C1- site, C1- is bonded in a distorted linear geometry to one Si4+ and one O2- atom. The C–O bond length is 1.16 Å. H1+ is bonded in a single-bond geometry to one Si4+ atom. O2- is bonded in a single-bond geometry to one C1- atom.},
doi = {10.17188/1285370},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {6}
}