Materials Data on Ho3CuSiSe7 by Materials Project
Abstract
Ho3CuSiSe7 crystallizes in the hexagonal P6_3 space group. The structure is three-dimensional. Ho3+ is bonded in a 8-coordinate geometry to eight Se2- atoms. There are a spread of Ho–Se bond distances ranging from 2.87–3.34 Å. Cu1+ is bonded in a trigonal planar geometry to three equivalent Se2- atoms. All Cu–Se bond lengths are 2.36 Å. Si4+ is bonded in a tetrahedral geometry to four Se2- atoms. There are one shorter (2.28 Å) and three longer (2.31 Å) Si–Se bond lengths. There are three inequivalent Se2- sites. In the first Se2- site, Se2- is bonded in a 4-coordinate geometry to three equivalent Ho3+ and one Si4+ atom. In the second Se2- site, Se2- is bonded in a 5-coordinate geometry to four equivalent Ho3+ and one Cu1+ atom. In the third Se2- site, Se2- is bonded in a distorted tetrahedral geometry to three equivalent Ho3+ and one Si4+ atom.
- Publication Date:
- Other Number(s):
- mp-571468
- DOE Contract Number:
- AC02-05CH11231
- Research Org.:
- LBNL Materials Project; Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- Collaborations:
- The Materials Project; MIT; UC Berkeley; Duke; U Louvain
- Subject:
- 36 MATERIALS SCIENCE; Cu-Ho-Se-Si; Ho3CuSiSe7; crystal structure
- OSTI Identifier:
- 1272918
- DOI:
- https://doi.org/10.17188/1272918
Citation Formats
Materials Data on Ho3CuSiSe7 by Materials Project. United States: N. p., 2020.
Web. doi:10.17188/1272918.
Materials Data on Ho3CuSiSe7 by Materials Project. United States. doi:https://doi.org/10.17188/1272918
2020.
"Materials Data on Ho3CuSiSe7 by Materials Project". United States. doi:https://doi.org/10.17188/1272918. https://www.osti.gov/servlets/purl/1272918. Pub date:Thu Jul 23 00:00:00 EDT 2020
@article{osti_1272918,
title = {Materials Data on Ho3CuSiSe7 by Materials Project},
abstractNote = {Ho3CuSiSe7 crystallizes in the hexagonal P6_3 space group. The structure is three-dimensional. Ho3+ is bonded in a 8-coordinate geometry to eight Se2- atoms. There are a spread of Ho–Se bond distances ranging from 2.87–3.34 Å. Cu1+ is bonded in a trigonal planar geometry to three equivalent Se2- atoms. All Cu–Se bond lengths are 2.36 Å. Si4+ is bonded in a tetrahedral geometry to four Se2- atoms. There are one shorter (2.28 Å) and three longer (2.31 Å) Si–Se bond lengths. There are three inequivalent Se2- sites. In the first Se2- site, Se2- is bonded in a 4-coordinate geometry to three equivalent Ho3+ and one Si4+ atom. In the second Se2- site, Se2- is bonded in a 5-coordinate geometry to four equivalent Ho3+ and one Cu1+ atom. In the third Se2- site, Se2- is bonded in a distorted tetrahedral geometry to three equivalent Ho3+ and one Si4+ atom.},
doi = {10.17188/1272918},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {7}
}
