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Title: Materials Data on Nb4GaS8 by Materials Project

Abstract

Nb4GaS8 crystallizes in the tetragonal I-4m2 space group. The structure is three-dimensional. Nb+3.25+ is bonded to six S2- atoms to form distorted NbS6 octahedra that share corners with three equivalent GaS4 tetrahedra and edges with six equivalent NbS6 octahedra. There are a spread of Nb–S bond distances ranging from 2.42–2.67 Å. Ga3+ is bonded to four equivalent S2- atoms to form GaS4 tetrahedra that share corners with twelve equivalent NbS6 octahedra. The corner-sharing octahedra tilt angles range from 63–64°. All Ga–S bond lengths are 2.33 Å. There are two inequivalent S2- sites. In the first S2- site, S2- is bonded in a 3-coordinate geometry to three equivalent Nb+3.25+ atoms. In the second S2- site, S2- is bonded to three equivalent Nb+3.25+ and one Ga3+ atom to form a mixture of distorted edge and corner-sharing SNb3Ga tetrahedra.

Authors:
Publication Date:
Other Number(s):
mp-4139
DOE Contract Number:  
AC02-05CH11231; EDCBEE
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Collaborations:
MIT; UC Berkeley; Duke; U Louvain
Subject:
36 MATERIALS SCIENCE
Keywords:
crystal structure; Nb4GaS8; Ga-Nb-S
OSTI Identifier:
1207885
DOI:
https://doi.org/10.17188/1207885

Citation Formats

The Materials Project. Materials Data on Nb4GaS8 by Materials Project. United States: N. p., 2020. Web. doi:10.17188/1207885.
The Materials Project. Materials Data on Nb4GaS8 by Materials Project. United States. doi:https://doi.org/10.17188/1207885
The Materials Project. 2020. "Materials Data on Nb4GaS8 by Materials Project". United States. doi:https://doi.org/10.17188/1207885. https://www.osti.gov/servlets/purl/1207885. Pub date:Thu Jul 16 00:00:00 EDT 2020
@article{osti_1207885,
title = {Materials Data on Nb4GaS8 by Materials Project},
author = {The Materials Project},
abstractNote = {Nb4GaS8 crystallizes in the tetragonal I-4m2 space group. The structure is three-dimensional. Nb+3.25+ is bonded to six S2- atoms to form distorted NbS6 octahedra that share corners with three equivalent GaS4 tetrahedra and edges with six equivalent NbS6 octahedra. There are a spread of Nb–S bond distances ranging from 2.42–2.67 Å. Ga3+ is bonded to four equivalent S2- atoms to form GaS4 tetrahedra that share corners with twelve equivalent NbS6 octahedra. The corner-sharing octahedra tilt angles range from 63–64°. All Ga–S bond lengths are 2.33 Å. There are two inequivalent S2- sites. In the first S2- site, S2- is bonded in a 3-coordinate geometry to three equivalent Nb+3.25+ atoms. In the second S2- site, S2- is bonded to three equivalent Nb+3.25+ and one Ga3+ atom to form a mixture of distorted edge and corner-sharing SNb3Ga tetrahedra.},
doi = {10.17188/1207885},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {7}
}