Materials Data on Ga4Bi2O9 by Materials Project

doi:10.17188/1199566

Title: Materials Data on Ga4Bi2O9 by Materials Project

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Abstract

Bi2Ga4O9 crystallizes in the orthorhombic Pbam space group. The structure is three-dimensional. there are two inequivalent Ga3+ sites. In the first Ga3+ site, Ga3+ is bonded to four O2- atoms to form GaO4 tetrahedra that share corners with four equivalent GaO6 octahedra and a cornercorner with one GaO4 tetrahedra. The corner-sharing octahedra tilt angles range from 50–60°. There are a spread of Ga–O bond distances ranging from 1.82–1.89 Å. In the second Ga3+ site, Ga3+ is bonded to six O2- atoms to form GaO6 octahedra that share corners with four equivalent GaO4 tetrahedra and edges with two equivalent GaO6 octahedra. There are two shorter (1.96 Å) and four longer (2.04 Å) Ga–O bond lengths. Bi3+ is bonded in a 4-coordinate geometry to six O2- atoms. There are a spread of Bi–O bond distances ranging from 2.17–3.01 Å. There are four inequivalent O2- sites. In the first O2- site, O2- is bonded in a linear geometry to two equivalent Ga3+ atoms. In the second O2- site, O2- is bonded in a 3-coordinate geometry to two Ga3+ and two equivalent Bi3+ atoms. In the third O2- site, O2- is bonded in a distorted trigonal planar geometry to three Ga3+ atoms. In themore »« less

Authors:: The Materials Project

Publication Date:: Tue Jul 14 00:00:00 EDT 2020

Other Number(s):: mp-23519

DOE Contract Number:: AC02-05CH11231; EDCBEE

Research Org.:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Collaborations:: MIT; UC Berkeley; Duke; U Louvain

Subject:: 36 MATERIALS SCIENCE

Keywords:: crystal structure; Ga4Bi2O9; Bi-Ga-O

OSTI Identifier:: 1199566

DOI:: https://doi.org/10.17188/1199566

Citation Formats


                    The Materials Project. Materials Data on Ga4Bi2O9 by Materials Project.  United States: N. p., 2020. 
        Web.  doi:10.17188/1199566.

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                    The Materials Project. Materials Data on Ga4Bi2O9 by Materials Project.  United States.  doi:https://doi.org/10.17188/1199566

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                    The Materials Project. 2020.  
"Materials Data on Ga4Bi2O9 by Materials Project".  United States.  doi:https://doi.org/10.17188/1199566.  https://www.osti.gov/servlets/purl/1199566. Pub date:Tue Jul 14 00:00:00 EDT 2020

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@article{osti_1199566,

  title        = {Materials Data on Ga4Bi2O9 by Materials Project},

  author       = {The Materials Project},

  abstractNote = {Bi2Ga4O9 crystallizes in the orthorhombic Pbam space group. The structure is three-dimensional. there are two inequivalent Ga3+ sites. In the first Ga3+ site, Ga3+ is bonded to four O2- atoms to form GaO4 tetrahedra that share corners with four equivalent GaO6 octahedra and a cornercorner with one GaO4 tetrahedra. The corner-sharing octahedra tilt angles range from 50–60°. There are a spread of Ga–O bond distances ranging from 1.82–1.89 Å. In the second Ga3+ site, Ga3+ is bonded to six O2- atoms to form GaO6 octahedra that share corners with four equivalent GaO4 tetrahedra and edges with two equivalent GaO6 octahedra. There are two shorter (1.96 Å) and four longer (2.04 Å) Ga–O bond lengths. Bi3+ is bonded in a 4-coordinate geometry to six O2- atoms. There are a spread of Bi–O bond distances ranging from 2.17–3.01 Å. There are four inequivalent O2- sites. In the first O2- site, O2- is bonded in a linear geometry to two equivalent Ga3+ atoms. In the second O2- site, O2- is bonded in a 3-coordinate geometry to two Ga3+ and two equivalent Bi3+ atoms. In the third O2- site, O2- is bonded in a distorted trigonal planar geometry to three Ga3+ atoms. In the fourth O2- site, O2- is bonded in a 4-coordinate geometry to two equivalent Ga3+ and two equivalent Bi3+ atoms.},

  doi          = {10.17188/1199566},

  journal      = {},

  number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Jul 14 00:00:00 EDT 2020},

  month        = {Tue Jul 14 00:00:00 EDT 2020}

}

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DOI: https://doi.org/10.17188/1199566

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