Materials Data on InGaS3 by Materials Project

doi:10.17188/1195073

Title: Materials Data on InGaS3 by Materials Project

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Abstract

InGaS3 crystallizes in the orthorhombic Cmc2_1 space group. The structure is two-dimensional and consists of two InGaS3 sheets oriented in the (0, 1, 0) direction. In3+ is bonded to six S2- atoms to form InS6 octahedra that share corners with four equivalent InS6 octahedra, corners with three equivalent GaS4 tetrahedra, edges with two equivalent InS6 octahedra, and edges with two equivalent GaS4 tetrahedra. The corner-sharing octahedral tilt angles are 50°. There are a spread of In–S bond distances ranging from 2.58–2.71 Å. Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with three equivalent InS6 octahedra, corners with two equivalent GaS4 tetrahedra, and edges with two equivalent InS6 octahedra. The corner-sharing octahedra tilt angles range from 63–65°. There are a spread of Ga–S bond distances ranging from 2.26–2.35 Å. There are three inequivalent S2- sites. In the first S2- site, S2- is bonded in a trigonal non-coplanar geometry to two equivalent In3+ and one Ga3+ atom. In the second S2- site, S2- is bonded in a 3-coordinate geometry to one In3+ and two equivalent Ga3+ atoms. In the third S2- site, S2- is bonded in a rectangular see-saw-like geometry to three equivalent In3+ and onemore » Ga3+ atom.« less

Authors:: The Materials Project

Publication Date:: 2020-07-16

Other Number(s):: mp-19885

DOE Contract Number:: AC02-05CH11231; EDCBEE

Research Org.:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Collaborations:: MIT; UC Berkeley; Duke; U Louvain

Subject:: 36 MATERIALS SCIENCE

Keywords:: crystal structure; InGaS3; Ga-In-S

OSTI Identifier:: 1195073

DOI:: https://doi.org/10.17188/1195073

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                    The Materials Project. Materials Data on InGaS3 by Materials Project.  United States: N. p., 2020. 
        Web.  doi:10.17188/1195073.

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                    The Materials Project. Materials Data on InGaS3 by Materials Project.  United States.  doi:https://doi.org/10.17188/1195073

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                    The Materials Project. 2020.  
"Materials Data on InGaS3 by Materials Project".  United States.  doi:https://doi.org/10.17188/1195073.  https://www.osti.gov/servlets/purl/1195073. Pub date:Thu Jul 16 00:00:00 EDT 2020

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@article{osti_1195073,

  title        = {Materials Data on InGaS3 by Materials Project},

  author       = {The Materials Project},

  abstractNote = {InGaS3 crystallizes in the orthorhombic Cmc2_1 space group. The structure is two-dimensional and consists of two InGaS3 sheets oriented in the (0, 1, 0) direction. In3+ is bonded to six S2- atoms to form InS6 octahedra that share corners with four equivalent InS6 octahedra, corners with three equivalent GaS4 tetrahedra, edges with two equivalent InS6 octahedra, and edges with two equivalent GaS4 tetrahedra. The corner-sharing octahedral tilt angles are 50°. There are a spread of In–S bond distances ranging from 2.58–2.71 Å. Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with three equivalent InS6 octahedra, corners with two equivalent GaS4 tetrahedra, and edges with two equivalent InS6 octahedra. The corner-sharing octahedra tilt angles range from 63–65°. There are a spread of Ga–S bond distances ranging from 2.26–2.35 Å. There are three inequivalent S2- sites. In the first S2- site, S2- is bonded in a trigonal non-coplanar geometry to two equivalent In3+ and one Ga3+ atom. In the second S2- site, S2- is bonded in a 3-coordinate geometry to one In3+ and two equivalent Ga3+ atoms. In the third S2- site, S2- is bonded in a rectangular see-saw-like geometry to three equivalent In3+ and one Ga3+ atom.},

  doi          = {10.17188/1195073},

  journal      = {},

  number       = ,

  volume       = ,

  place        = {United States},

  year         = {2020},

  month        = {7}

}

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DOI: https://doi.org/10.17188/1195073

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