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Title: Materials Data on In2Si2O7 by Materials Project

Abstract

In2Si2O7 crystallizes in the cubic Fd-3m space group. The structure is three-dimensional. In3+ is bonded to eight O2- atoms to form distorted InO8 hexagonal bipyramids that share edges with six equivalent InO8 hexagonal bipyramids and edges with six equivalent SiO6 octahedra. There are two shorter (2.07 Å) and six longer (2.40 Å) In–O bond lengths. Si4+ is bonded to six equivalent O2- atoms to form SiO6 octahedra that share corners with six equivalent SiO6 octahedra and edges with six equivalent InO8 hexagonal bipyramids. The corner-sharing octahedral tilt angles are 44°. All Si–O bond lengths are 1.82 Å. There are two inequivalent O2- sites. In the first O2- site, O2- is bonded in a 4-coordinate geometry to two equivalent In3+ and two equivalent Si4+ atoms. In the second O2- site, O2- is bonded to four equivalent In3+ atoms to form corner-sharing OIn4 tetrahedra.

Publication Date:
Other Number(s):
mp-19784
DOE Contract Number:  
AC02-05CH11231
Research Org.:
LBNL Materials Project; Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Collaborations:
The Materials Project; MIT; UC Berkeley; Duke; U Louvain
Subject:
36 MATERIALS SCIENCE; In-O-Si; In2Si2O7; crystal structure
OSTI Identifier:
1194983
DOI:
https://doi.org/10.17188/1194983

Citation Formats

Materials Data on In2Si2O7 by Materials Project. United States: N. p., 2020. Web. doi:10.17188/1194983.
Materials Data on In2Si2O7 by Materials Project. United States. doi:https://doi.org/10.17188/1194983
2020. "Materials Data on In2Si2O7 by Materials Project". United States. doi:https://doi.org/10.17188/1194983. https://www.osti.gov/servlets/purl/1194983. Pub date:Sat Jul 18 04:00:00 UTC 2020
@article{osti_1194983,
title = {Materials Data on In2Si2O7 by Materials Project},
abstractNote = {In2Si2O7 crystallizes in the cubic Fd-3m space group. The structure is three-dimensional. In3+ is bonded to eight O2- atoms to form distorted InO8 hexagonal bipyramids that share edges with six equivalent InO8 hexagonal bipyramids and edges with six equivalent SiO6 octahedra. There are two shorter (2.07 Å) and six longer (2.40 Å) In–O bond lengths. Si4+ is bonded to six equivalent O2- atoms to form SiO6 octahedra that share corners with six equivalent SiO6 octahedra and edges with six equivalent InO8 hexagonal bipyramids. The corner-sharing octahedral tilt angles are 44°. All Si–O bond lengths are 1.82 Å. There are two inequivalent O2- sites. In the first O2- site, O2- is bonded in a 4-coordinate geometry to two equivalent In3+ and two equivalent Si4+ atoms. In the second O2- site, O2- is bonded to four equivalent In3+ atoms to form corner-sharing OIn4 tetrahedra.},
doi = {10.17188/1194983},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {7}
}