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Title: Materials Data on Cd4SiSe6 by Materials Project

Abstract

Cd4SiSe6 is Chalcostibite-like structured and crystallizes in the monoclinic Cc space group. The structure is three-dimensional. there are four inequivalent Cd2+ sites. In the first Cd2+ site, Cd2+ is bonded in a 5-coordinate geometry to five Se2- atoms. There are a spread of Cd–Se bond distances ranging from 2.70–3.48 Å. In the second Cd2+ site, Cd2+ is bonded to four Se2- atoms to form CdSe4 tetrahedra that share corners with two equivalent CdSe4 tetrahedra and corners with two equivalent SiSe4 tetrahedra. There are a spread of Cd–Se bond distances ranging from 2.68–2.73 Å. In the third Cd2+ site, Cd2+ is bonded to four Se2- atoms to form CdSe4 tetrahedra that share corners with two equivalent CdSe4 tetrahedra and corners with two equivalent SiSe4 tetrahedra. There are a spread of Cd–Se bond distances ranging from 2.68–2.76 Å. In the fourth Cd2+ site, Cd2+ is bonded in a 4-coordinate geometry to four Se2- atoms. There are a spread of Cd–Se bond distances ranging from 2.69–2.77 Å. Si4+ is bonded to four Se2- atoms to form SiSe4 tetrahedra that share corners with four CdSe4 tetrahedra. There are a spread of Si–Se bond distances ranging from 2.28–2.30 Å. There are six inequivalent Se2- sites.more » In the first Se2- site, Se2- is bonded to four Cd2+ atoms to form distorted corner-sharing SeCd4 trigonal pyramids. In the second Se2- site, Se2- is bonded in a trigonal non-coplanar geometry to two Cd2+ and one Si4+ atom. In the third Se2- site, Se2- is bonded in a distorted trigonal non-coplanar geometry to two Cd2+ and one Si4+ atom. In the fourth Se2- site, Se2- is bonded in a 3-coordinate geometry to three Cd2+ and one Si4+ atom. In the fifth Se2- site, Se2- is bonded to four Cd2+ atoms to form corner-sharing SeCd4 tetrahedra. In the sixth Se2- site, Se2- is bonded in a 3-coordinate geometry to two Cd2+ and one Si4+ atom.« less

Publication Date:
Other Number(s):
mp-17791
DOE Contract Number:  
AC02-05CH11231; EDCBEE
Product Type:
Dataset
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Subject:
36 MATERIALS SCIENCE
Keywords:
crystal structure; Cd4SiSe6; Cd-Se-Si
OSTI Identifier:
1192694
DOI:
https://doi.org/10.17188/1192694

Citation Formats

The Materials Project. Materials Data on Cd4SiSe6 by Materials Project. United States: N. p., 2020. Web. doi:10.17188/1192694.
The Materials Project. Materials Data on Cd4SiSe6 by Materials Project. United States. doi:https://doi.org/10.17188/1192694
The Materials Project. 2020. "Materials Data on Cd4SiSe6 by Materials Project". United States. doi:https://doi.org/10.17188/1192694. https://www.osti.gov/servlets/purl/1192694. Pub date:Sat Jul 18 00:00:00 EDT 2020
@article{osti_1192694,
title = {Materials Data on Cd4SiSe6 by Materials Project},
author = {The Materials Project},
abstractNote = {Cd4SiSe6 is Chalcostibite-like structured and crystallizes in the monoclinic Cc space group. The structure is three-dimensional. there are four inequivalent Cd2+ sites. In the first Cd2+ site, Cd2+ is bonded in a 5-coordinate geometry to five Se2- atoms. There are a spread of Cd–Se bond distances ranging from 2.70–3.48 Å. In the second Cd2+ site, Cd2+ is bonded to four Se2- atoms to form CdSe4 tetrahedra that share corners with two equivalent CdSe4 tetrahedra and corners with two equivalent SiSe4 tetrahedra. There are a spread of Cd–Se bond distances ranging from 2.68–2.73 Å. In the third Cd2+ site, Cd2+ is bonded to four Se2- atoms to form CdSe4 tetrahedra that share corners with two equivalent CdSe4 tetrahedra and corners with two equivalent SiSe4 tetrahedra. There are a spread of Cd–Se bond distances ranging from 2.68–2.76 Å. In the fourth Cd2+ site, Cd2+ is bonded in a 4-coordinate geometry to four Se2- atoms. There are a spread of Cd–Se bond distances ranging from 2.69–2.77 Å. Si4+ is bonded to four Se2- atoms to form SiSe4 tetrahedra that share corners with four CdSe4 tetrahedra. There are a spread of Si–Se bond distances ranging from 2.28–2.30 Å. There are six inequivalent Se2- sites. In the first Se2- site, Se2- is bonded to four Cd2+ atoms to form distorted corner-sharing SeCd4 trigonal pyramids. In the second Se2- site, Se2- is bonded in a trigonal non-coplanar geometry to two Cd2+ and one Si4+ atom. In the third Se2- site, Se2- is bonded in a distorted trigonal non-coplanar geometry to two Cd2+ and one Si4+ atom. In the fourth Se2- site, Se2- is bonded in a 3-coordinate geometry to three Cd2+ and one Si4+ atom. In the fifth Se2- site, Se2- is bonded to four Cd2+ atoms to form corner-sharing SeCd4 tetrahedra. In the sixth Se2- site, Se2- is bonded in a 3-coordinate geometry to two Cd2+ and one Si4+ atom.},
doi = {10.17188/1192694},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {7}
}