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Title: Materials Data on Ho3CuSiS7 by Materials Project

Abstract

Ho3CuSiS7 crystallizes in the hexagonal P6_3 space group. The structure is three-dimensional. Ho3+ is bonded in a 8-coordinate geometry to eight S2- atoms. There are a spread of Ho–S bond distances ranging from 2.75–3.15 Å. Cu1+ is bonded in a trigonal planar geometry to three equivalent S2- atoms. All Cu–S bond lengths are 2.24 Å. Si4+ is bonded in a tetrahedral geometry to four S2- atoms. There are one shorter (2.11 Å) and three longer (2.15 Å) Si–S bond lengths. There are three inequivalent S2- sites. In the first S2- site, S2- is bonded in a 4-coordinate geometry to three equivalent Ho3+ and one Si4+ atom. In the second S2- site, S2- is bonded in a 5-coordinate geometry to four equivalent Ho3+ and one Cu1+ atom. In the third S2- site, S2- is bonded in a distorted tetrahedral geometry to three equivalent Ho3+ and one Si4+ atom.

Publication Date:
Other Number(s):
mp-17486
DOE Contract Number:  
AC02-05CH11231
Research Org.:
LBNL Materials Project; Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Collaborations:
The Materials Project; MIT; UC Berkeley; Duke; U Louvain
Subject:
36 MATERIALS SCIENCE; Cu-Ho-S-Si; Ho3CuSiS7; crystal structure
OSTI Identifier:
1192530
DOI:
https://doi.org/10.17188/1192530

Citation Formats

Materials Data on Ho3CuSiS7 by Materials Project. United States: N. p., 2020. Web. doi:10.17188/1192530.
Materials Data on Ho3CuSiS7 by Materials Project. United States. doi:https://doi.org/10.17188/1192530
2020. "Materials Data on Ho3CuSiS7 by Materials Project". United States. doi:https://doi.org/10.17188/1192530. https://www.osti.gov/servlets/purl/1192530. Pub date:Fri Jul 24 04:00:00 UTC 2020
@article{osti_1192530,
title = {Materials Data on Ho3CuSiS7 by Materials Project},
abstractNote = {Ho3CuSiS7 crystallizes in the hexagonal P6_3 space group. The structure is three-dimensional. Ho3+ is bonded in a 8-coordinate geometry to eight S2- atoms. There are a spread of Ho–S bond distances ranging from 2.75–3.15 Å. Cu1+ is bonded in a trigonal planar geometry to three equivalent S2- atoms. All Cu–S bond lengths are 2.24 Å. Si4+ is bonded in a tetrahedral geometry to four S2- atoms. There are one shorter (2.11 Å) and three longer (2.15 Å) Si–S bond lengths. There are three inequivalent S2- sites. In the first S2- site, S2- is bonded in a 4-coordinate geometry to three equivalent Ho3+ and one Si4+ atom. In the second S2- site, S2- is bonded in a 5-coordinate geometry to four equivalent Ho3+ and one Cu1+ atom. In the third S2- site, S2- is bonded in a distorted tetrahedral geometry to three equivalent Ho3+ and one Si4+ atom.},
doi = {10.17188/1192530},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2020},
month = {7}
}