DOE Data Explorer title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Materials Data on GaN by Materials Project

Abstract

GaN is Zincblende, Sphalerite structured and crystallizes in the cubic F-43m space group. The structure is three-dimensional. Ga3+ is bonded to four equivalent N3- atoms to form corner-sharing GaN4 tetrahedra. All Ga–N bond lengths are 1.97 Å. N3- is bonded to four equivalent Ga3+ atoms to form corner-sharing NGa4 tetrahedra.

Authors:
Publication Date:
Other Number(s):
mp-830
DOE Contract Number:  
AC02-05CH11231; EDCBEE
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Collaborations:
MIT; UC Berkeley; Duke; U Louvain
Subject:
36 MATERIALS SCIENCE
Keywords:
crystal structure; GaN; Ga-N
OSTI Identifier:
1272793
DOI:
https://doi.org/10.17188/1272793

Citation Formats

The Materials Project. Materials Data on GaN by Materials Project. United States: N. p., 2020. Web. doi:10.17188/1272793.
The Materials Project. Materials Data on GaN by Materials Project. United States. doi:https://doi.org/10.17188/1272793
The Materials Project. 2020. "Materials Data on GaN by Materials Project". United States. doi:https://doi.org/10.17188/1272793. https://www.osti.gov/servlets/purl/1272793. Pub date:Sat Jul 18 00:00:00 EDT 2020
@article{osti_1272793,
title = {Materials Data on GaN by Materials Project},
author = {The Materials Project},
abstractNote = {GaN is Zincblende, Sphalerite structured and crystallizes in the cubic F-43m space group. The structure is three-dimensional. Ga3+ is bonded to four equivalent N3- atoms to form corner-sharing GaN4 tetrahedra. All Ga–N bond lengths are 1.97 Å. N3- is bonded to four equivalent Ga3+ atoms to form corner-sharing NGa4 tetrahedra.},
doi = {10.17188/1272793},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jul 18 00:00:00 EDT 2020},
month = {Sat Jul 18 00:00:00 EDT 2020}
}