U.S. Department of EnergyOffice of Scientific and Technical Information
Materials Data on In5(BiS4)3 by Materials Project
Abstract
In5(BiS4)3 is Orthorhombic Perovskite-like structured and crystallizes in the monoclinic C2/m space group. The structure is three-dimensional. there are six inequivalent In3+ sites. In the first In3+ site, In3+ is bonded to six S2- atoms to form a mixture of corner and edge-sharing InS6 octahedra. The corner-sharing octahedral tilt angles are 53°. There are two shorter (2.66 Å) and four longer (2.68 Å) In–S bond lengths. In the second In3+ site, In3+ is bonded to six S2- atoms to form a mixture of corner and edge-sharing InS6 octahedra. The corner-sharing octahedral tilt angles are 2°. There are two shorter (2.54 Å) and four longer (2.75 Å) In–S bond lengths. In the third In3+ site, In3+ is bonded to six S2- atoms to form a mixture of corner and edge-sharing InS6 octahedra. The corner-sharing octahedral tilt angles are 59°. There are a spread of In–S bond distances ranging from 2.55–2.70 Å. In the fourth In3+ site, In3+ is bonded to six S2- atoms to form a mixture of corner and edge-sharing InS6 octahedra. The corner-sharing octahedra tilt angles range from 48–59°. There are a spread of In–S bond distances ranging from 2.60–2.69 Å. In the fifth In3+ site, In3+ is bondedmore »
- Authors:
- Publication Date:
- Other Number(s):
- mp-504646
- DOE Contract Number:
- AC02-05CH11231; EDCBEE
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Collaborations:
- MIT; UC Berkeley; Duke; U Louvain
- Subject:
- 36 MATERIALS SCIENCE
- Keywords:
- crystal structure; In5(BiS4)3; Bi-In-S
- OSTI Identifier:
- 1261893
- DOI:
- https://doi.org/10.17188/1261893
Citation Formats
The Materials Project. Materials Data on In5(BiS4)3 by Materials Project. United States: N. p., 2020.
Web. doi:10.17188/1261893.
The Materials Project. Materials Data on In5(BiS4)3 by Materials Project. United States. doi:https://doi.org/10.17188/1261893
The Materials Project. 2020.
"Materials Data on In5(BiS4)3 by Materials Project". United States. doi:https://doi.org/10.17188/1261893. https://www.osti.gov/servlets/purl/1261893. Pub date:Sat May 02 00:00:00 EDT 2020
@article{osti_1261893,
title = {Materials Data on In5(BiS4)3 by Materials Project},
author = {The Materials Project},
abstractNote = {In5(BiS4)3 is Orthorhombic Perovskite-like structured and crystallizes in the monoclinic C2/m space group. The structure is three-dimensional. there are six inequivalent In3+ sites. In the first In3+ site, In3+ is bonded to six S2- atoms to form a mixture of corner and edge-sharing InS6 octahedra. The corner-sharing octahedral tilt angles are 53°. There are two shorter (2.66 Å) and four longer (2.68 Å) In–S bond lengths. In the second In3+ site, In3+ is bonded to six S2- atoms to form a mixture of corner and edge-sharing InS6 octahedra. The corner-sharing octahedral tilt angles are 2°. There are two shorter (2.54 Å) and four longer (2.75 Å) In–S bond lengths. In the third In3+ site, In3+ is bonded to six S2- atoms to form a mixture of corner and edge-sharing InS6 octahedra. The corner-sharing octahedral tilt angles are 59°. There are a spread of In–S bond distances ranging from 2.55–2.70 Å. In the fourth In3+ site, In3+ is bonded to six S2- atoms to form a mixture of corner and edge-sharing InS6 octahedra. The corner-sharing octahedra tilt angles range from 48–59°. There are a spread of In–S bond distances ranging from 2.60–2.69 Å. In the fifth In3+ site, In3+ is bonded to six S2- atoms to form a mixture of corner and edge-sharing InS6 octahedra. The corner-sharing octahedral tilt angles are 48°. There are a spread of In–S bond distances ranging from 2.56–2.84 Å. In the sixth In3+ site, In3+ is bonded to six S2- atoms to form a mixture of corner and edge-sharing InS6 octahedra. The corner-sharing octahedra tilt angles range from 2–53°. There are a spread of In–S bond distances ranging from 2.53–2.86 Å. There are three inequivalent Bi3+ sites. In the first Bi3+ site, Bi3+ is bonded in a 8-coordinate geometry to eight S2- atoms. There are a spread of Bi–S bond distances ranging from 2.65–3.43 Å. In the second Bi3+ site, Bi3+ is bonded in a 8-coordinate geometry to eight S2- atoms. There are a spread of Bi–S bond distances ranging from 2.67–3.30 Å. In the third Bi3+ site, Bi3+ is bonded in a 7-coordinate geometry to seven S2- atoms. There are a spread of Bi–S bond distances ranging from 2.66–3.42 Å. There are twelve inequivalent S2- sites. In the first S2- site, S2- is bonded in a rectangular see-saw-like geometry to two In3+ and two equivalent Bi3+ atoms. In the second S2- site, S2- is bonded in a 3-coordinate geometry to three In3+ and two equivalent Bi3+ atoms. In the third S2- site, S2- is bonded to two equivalent In3+ and three Bi3+ atoms to form distorted edge-sharing SIn2Bi3 trigonal bipyramids. In the fourth S2- site, S2- is bonded in a 4-coordinate geometry to three In3+ and one Bi3+ atom. In the fifth S2- site, S2- is bonded in a 5-coordinate geometry to two equivalent In3+ and three Bi3+ atoms. In the sixth S2- site, S2- is bonded to five In3+ atoms to form a mixture of corner and edge-sharing SIn5 square pyramids. In the seventh S2- site, S2- is bonded in a 3-coordinate geometry to two equivalent In3+ and three Bi3+ atoms. In the eighth S2- site, S2- is bonded in a rectangular see-saw-like geometry to four In3+ atoms. In the ninth S2- site, S2- is bonded in a trigonal non-coplanar geometry to three Bi3+ atoms. In the tenth S2- site, S2- is bonded in a 5-coordinate geometry to three In3+ and two equivalent Bi3+ atoms. In the eleventh S2- site, S2- is bonded in a 5-coordinate geometry to three equivalent In3+ and two equivalent Bi3+ atoms. In the twelfth S2- site, S2- is bonded in a distorted trigonal non-coplanar geometry to one In3+ and two equivalent Bi3+ atoms.},
doi = {10.17188/1261893},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat May 02 00:00:00 EDT 2020},
month = {Sat May 02 00:00:00 EDT 2020}
}
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