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Title: Materials Data on SiH3I by Materials Project

Abstract

H3SiI is Silicon tetrafluoride-derived structured and crystallizes in the monoclinic P2_1/c space group. The structure is zero-dimensional and consists of four iodosilane molecules. Si4+ is bonded in a tetrahedral geometry to three H1- and one I1- atom. All Si–H bond lengths are 1.49 Å. The Si–I bond length is 2.48 Å. There are three inequivalent H1- sites. In the first H1- site, H1- is bonded in a single-bond geometry to one Si4+ atom. In the second H1- site, H1- is bonded in a single-bond geometry to one Si4+ atom. In the third H1- site, H1- is bonded in a single-bond geometry to one Si4+ atom. I1- is bonded in a single-bond geometry to one Si4+ atom.

Authors:
Publication Date:
Other Number(s):
mp-28538
DOE Contract Number:  
AC02-05CH11231; EDCBEE
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). LBNL Materials Project
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Collaborations:
MIT; UC Berkeley; Duke; U Louvain
Subject:
36 MATERIALS SCIENCE
Keywords:
crystal structure; SiH3I; H-I-Si
OSTI Identifier:
1202643
DOI:
https://doi.org/10.17188/1202643

Citation Formats

The Materials Project. Materials Data on SiH3I by Materials Project. United States: N. p., 2020. Web. doi:10.17188/1202643.
The Materials Project. Materials Data on SiH3I by Materials Project. United States. doi:https://doi.org/10.17188/1202643
The Materials Project. 2020. "Materials Data on SiH3I by Materials Project". United States. doi:https://doi.org/10.17188/1202643. https://www.osti.gov/servlets/purl/1202643. Pub date:Sat May 02 00:00:00 EDT 2020
@article{osti_1202643,
title = {Materials Data on SiH3I by Materials Project},
author = {The Materials Project},
abstractNote = {H3SiI is Silicon tetrafluoride-derived structured and crystallizes in the monoclinic P2_1/c space group. The structure is zero-dimensional and consists of four iodosilane molecules. Si4+ is bonded in a tetrahedral geometry to three H1- and one I1- atom. All Si–H bond lengths are 1.49 Å. The Si–I bond length is 2.48 Å. There are three inequivalent H1- sites. In the first H1- site, H1- is bonded in a single-bond geometry to one Si4+ atom. In the second H1- site, H1- is bonded in a single-bond geometry to one Si4+ atom. In the third H1- site, H1- is bonded in a single-bond geometry to one Si4+ atom. I1- is bonded in a single-bond geometry to one Si4+ atom.},
doi = {10.17188/1202643},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat May 02 00:00:00 EDT 2020},
month = {Sat May 02 00:00:00 EDT 2020}
}