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Title: SiC Diode Test Data

Fabricated SiC diodes are tested in the temperature range of 300 °C to 600 °C.
Authors:
Publication Date:
Report Number(s):
441
DOE Contract Number:
FY14 AOP 1.1.5.1
Product Type:
Dataset
Research Org(s):
DOE Geothermal Data Repository; Sandia National Laboratories
Collaborations:
Sandia National Laboratories
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Geothermal Technologies Office (EE-4G)
Subject:
15 Geothermal Energy; geothermal; SiC; diode; test
OSTI Identifier:
1157514

M., A.. SiC Diode Test Data. United States: N. p., Web. doi:10.15121/1157514.
M., A.. SiC Diode Test Data. United States. doi:10.15121/1157514.
M., A.. 2014. "SiC Diode Test Data". United States. doi:10.15121/1157514. https://www.osti.gov/servlets/purl/1157514.
@misc{osti_1157514,
title = {SiC Diode Test Data},
author = {M., A.},
abstractNote = {Fabricated SiC diodes are tested in the temperature range of 300 °C to 600 °C.},
doi = {10.15121/1157514},
year = {2014},
month = {8} }
  1. The Geothermal Data Repository (GDR) is the submission point for all data collected from researchers funded by the U.S. Department of Energy's Geothermal Technologies Office (DOE GTO). The DOE GTO is providing access to its geothermal project information through the GDR. The GDR is powered by OpenEI, an energy information portal sponsored by the U.S. Department of Energy and developed by the National Renewable Energy Laboratory (NREL).
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