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Title: Atomic defects and diffusion in metals

Technical Report ·
DOI:https://doi.org/10.2172/6338530· OSTI ID:6338530

The tracer self-diffusion data for fcc and refractory bcc metals are briefly reviewed with respect to (i) the available monovacancy formation and migration properties and (ii) the high-temperature diffusion enhancement above that expected for mass transport via atomic exchange with monovacancies. While the atomic-defect mechanism for low-temperature self-diffusion can be reliably attributed to monovacancies, the mechanisms responsible for high-temperature mass transport are not so easily defined at this time; both divacancies and interstitials must be seriously considered. Possibilities for improving our understanding in this area are discussed. 68 references, 7 figures.

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States)
DOE Contract Number:
W-31-109-ENG-38
OSTI ID:
6338530
Report Number(s):
CONF-811150-17; ON: DE83007774
Resource Relation:
Conference: Yamada conference on point defects and defect interactions in metals, Kyoto, Japan, 16 Nov 1981; Other Information: Portions are illegible in microfiche products
Country of Publication:
United States
Language:
English