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Title: Charging characteritiscs of ultrananocrystalline diamond in RF MEMS capacitive switches.

Abstract

Modifications to a standard capacitive MEMS switch process have been made to allow the incorporation of ultra-nano-crystalline diamond as the switch dielectric. The impact on electromechanical performance is minimal. However, these devices exhibit uniquely different charging characteristics, with charging and discharging time constants 5-6 orders of magnitude quicker than conventional materials. This operation opens the possibility of devices which have no adverse effects of dielectric charging and can be operated near-continuously in the actuated state without significant degradation in reliability.

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
Defense Advanced Research Projects Agency (DARPA)
OSTI Identifier:
994055
Report Number(s):
ANL/MSD/JA-66397
Journal ID: 0149-645X; TRN: US201024%%247
DOE Contract Number:  
DE-AC02-06CH11357
Resource Type:
Conference
Resource Relation:
Conference: IEEE Transactions Meeting; Apr. 19, 2010 - Apr. 22, 2010; New Orleans, LA
Country of Publication:
United States
Language:
ENGLISH
Subject:
36 MATERIALS SCIENCE; DIAMONDS; DIELECTRIC MATERIALS; MODIFICATIONS; PERFORMANCE; RELIABILITY; SWITCHES

Citation Formats

Sumant, A V, Goldsmith, C, Auciello, O, Carlisle, J, Zheng, H, Hwang, J C. M., Palego, C, Wang, W, Carpick, R, Adiga, V, Datta, A, Gudeman, C, O'Brien, S, and Sampath, S. Charging characteritiscs of ultrananocrystalline diamond in RF MEMS capacitive switches.. United States: N. p., 2010. Web. doi:10.1109/MWSYM.2010.5518076.
Sumant, A V, Goldsmith, C, Auciello, O, Carlisle, J, Zheng, H, Hwang, J C. M., Palego, C, Wang, W, Carpick, R, Adiga, V, Datta, A, Gudeman, C, O'Brien, S, & Sampath, S. Charging characteritiscs of ultrananocrystalline diamond in RF MEMS capacitive switches.. United States. doi:10.1109/MWSYM.2010.5518076.
Sumant, A V, Goldsmith, C, Auciello, O, Carlisle, J, Zheng, H, Hwang, J C. M., Palego, C, Wang, W, Carpick, R, Adiga, V, Datta, A, Gudeman, C, O'Brien, S, and Sampath, S. Sat . "Charging characteritiscs of ultrananocrystalline diamond in RF MEMS capacitive switches.". United States. doi:10.1109/MWSYM.2010.5518076.
@article{osti_994055,
title = {Charging characteritiscs of ultrananocrystalline diamond in RF MEMS capacitive switches.},
author = {Sumant, A V and Goldsmith, C and Auciello, O and Carlisle, J and Zheng, H and Hwang, J C. M. and Palego, C and Wang, W and Carpick, R and Adiga, V and Datta, A and Gudeman, C and O'Brien, S and Sampath, S},
abstractNote = {Modifications to a standard capacitive MEMS switch process have been made to allow the incorporation of ultra-nano-crystalline diamond as the switch dielectric. The impact on electromechanical performance is minimal. However, these devices exhibit uniquely different charging characteristics, with charging and discharging time constants 5-6 orders of magnitude quicker than conventional materials. This operation opens the possibility of devices which have no adverse effects of dielectric charging and can be operated near-continuously in the actuated state without significant degradation in reliability.},
doi = {10.1109/MWSYM.2010.5518076},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {5}
}

Conference:
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