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Title: Planarization of High Aspect Ratio P-I-N Diode Pillar Arrays for Blanket Electrical Contacts

Abstract

Two planarization techniques for high aspect ratio three dimensional pillar structured P-I-N diodes have been developed in order to enable a continuous coating of metal on the top of the structures. The first technique allows for coating of structures with topography through the use of a planarizing photoresist followed by RIE etch back to expose the tops of the pillar structure. The second technique also utilizes photoresist, but instead allows for planarization of a structure in which the pillars are filled and coated with a conformal coating by matching the etch rate of the photoresist to the underlying layers. These techniques enable deposition using either sputtering or electron beam evaporation of metal films to allow for electrical contact to the tops of the underlying pillar structure. These processes have potential applications for many devices comprised of 3-D high aspect ratio structures. Two separate processes have been developed in order to ensure a uniform surface for deposition of an electrode on the {sup 10}Boron filled P-I-N pillar structured diodes. Each uses S1518 photoresist in order to achieve a relatively uniform surface despite the non-uniformity of the underlying detector. Both processes allow for metallization of the final structure and provide good electricalmore » continuity over a 3D pillar structure.« less

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
992297
Report Number(s):
LLNL-JRNL-422874
TRN: US201022%%270
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology B, vol. 28, no. 5, August 20, 2010, pp. 916
Additional Journal Information:
Journal Volume: 28; Journal Issue: 5
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; ASPECT RATIO; COATINGS; DEPOSITION; ELECTRODES; ELECTRON BEAMS; EVAPORATION; SPUTTERING; TOPOGRAPHY

Citation Formats

Voss, L F, Shao, Q, Reinhardt, C E, Graff, R T, Conway, A M, Nikolic, R J, Deo, N, and Cheung, C L. Planarization of High Aspect Ratio P-I-N Diode Pillar Arrays for Blanket Electrical Contacts. United States: N. p., 2009. Web.
Voss, L F, Shao, Q, Reinhardt, C E, Graff, R T, Conway, A M, Nikolic, R J, Deo, N, & Cheung, C L. Planarization of High Aspect Ratio P-I-N Diode Pillar Arrays for Blanket Electrical Contacts. United States.
Voss, L F, Shao, Q, Reinhardt, C E, Graff, R T, Conway, A M, Nikolic, R J, Deo, N, and Cheung, C L. Thu . "Planarization of High Aspect Ratio P-I-N Diode Pillar Arrays for Blanket Electrical Contacts". United States. https://www.osti.gov/servlets/purl/992297.
@article{osti_992297,
title = {Planarization of High Aspect Ratio P-I-N Diode Pillar Arrays for Blanket Electrical Contacts},
author = {Voss, L F and Shao, Q and Reinhardt, C E and Graff, R T and Conway, A M and Nikolic, R J and Deo, N and Cheung, C L},
abstractNote = {Two planarization techniques for high aspect ratio three dimensional pillar structured P-I-N diodes have been developed in order to enable a continuous coating of metal on the top of the structures. The first technique allows for coating of structures with topography through the use of a planarizing photoresist followed by RIE etch back to expose the tops of the pillar structure. The second technique also utilizes photoresist, but instead allows for planarization of a structure in which the pillars are filled and coated with a conformal coating by matching the etch rate of the photoresist to the underlying layers. These techniques enable deposition using either sputtering or electron beam evaporation of metal films to allow for electrical contact to the tops of the underlying pillar structure. These processes have potential applications for many devices comprised of 3-D high aspect ratio structures. Two separate processes have been developed in order to ensure a uniform surface for deposition of an electrode on the {sup 10}Boron filled P-I-N pillar structured diodes. Each uses S1518 photoresist in order to achieve a relatively uniform surface despite the non-uniformity of the underlying detector. Both processes allow for metallization of the final structure and provide good electrical continuity over a 3D pillar structure.},
doi = {},
journal = {Journal of Vacuum Science and Technology B, vol. 28, no. 5, August 20, 2010, pp. 916},
number = 5,
volume = 28,
place = {United States},
year = {2009},
month = {3}
}