Caborane beam from ITEP Bernas ion source for semiconductor implanters

Journal Article · Mon Feb 01 00:00:00 EST 2010 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.3258422· OSTI ID:990709

Seleznev, D; Hershcovitch, A; Kropachev, G; Kozlov, A; Kuibeda, R; Koshelev, V; Kulevoy, T; Jonson, B; Poole, J; Alexeyenko, O; Gurkova, E; Oks, E; Gushenets, V; Polozov, S; Masunov, E

A joint research and development of steady state intense boron ion sources for hundreds of electron-volt ion implanters has been in progress for the past 5 years. The difficulties of extraction and transportation of low energy boron beams can be solved by implanting clusters of boron atoms. In Institute for Theoretical and Experimental Physics (ITEP) the Bernas ion source successfully generated the beam of decaborane ions. The carborane (C{sub 2}B{sub 10}H{sub 12}) ion beam is more attractive material due to its better thermal stability. The results of carborane ion beam generation are presented. The result of the beam implantation into the silicon wafer is presented as well.

• Research Organization: Brookhaven National Lab. (BNL), Upton, NY (United States)
• Sponsoring Organization: DOE - Office Of Science
• DOE Contract Number: DE-AC02-98CH10886
• OSTI ID: 990709
• Report Number(s): BNL-91340-2010-JA; RSINAK; R&D Project: KBCH139; KB0202011; TRN: US1007380
• Journal Information: Review of Scientific Instruments, Vol. 81, Issue 2; Conference: 13th International Conference on Ion Sources; Gatlinburg, TN; 20090921 through 20090925; ISSN 0034-6748
• Country of Publication: United States
• Language: English

Related Subjects

43 PARTICLE ACCELERATORS
ATOMS
BORON
BORON IONS
CARBORANES
ION BEAMS
ION IMPLANTATION
ION SOURCES
PHYSICS
SILICON
STABILITY