Localization/Quasi-Delocalization Transitions and Quasi-Mobility-Edges in Shell-Doped Nanowires
- ORNL
We propose a novel concept, namely, shell-doping of nanowires, for control of carrier mobility in nanowires. Different from traditional doping, where dopant atoms are distributed uniformly inside nanowires, shell-doping spatially confines dopant atoms within a few atomic layers in the shell region of a nanowire. Our numerical results based on the Anderson model of electronic disorder show that electrons in a shell-doped nanowire exhibit a peculiar behavior very different from that of uniformly doped nanowires. Beyond some critical doping, electron dynamics in a shell-doped nanowire undergoes a localization/quasi-delocalization transition, namely, the electron diffusion length decreases in the regime of weak disorder but increases in the regime of strong disorder. This transition is a result of the existence of quasi-mobility-edges in the energy spectrum of the system, which can be exploited experimentally through control of electron concentration, carrier density, and degree of disorder.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). National Center for Computational Sciences (NCCS)
- Sponsoring Organization:
- USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 989546
- Journal Information:
- Nano Letters, Vol. 6, Issue 1; ISSN 1530-6984
- Country of Publication:
- United States
- Language:
- English
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