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Title: Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate

Abstract

A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.

Inventors:
 [1];  [1];  [1];  [2];  [1]
  1. Los Alamos, NM
  2. Santa Fe, NM
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
989007
Patent Number(s):
7,608,335
Application Number:
11/001,461
Assignee:
Los Alamos National Security, LLC (Los Alamos, NM) ALO
DOE Contract Number:  
W-7405-ENG-36
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Findikoglu, Alp T, Jia, Quanxi, Arendt, Paul N, Matias, Vladimir, and Choi, Woong. Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate. United States: N. p., 2009. Web.
Findikoglu, Alp T, Jia, Quanxi, Arendt, Paul N, Matias, Vladimir, & Choi, Woong. Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate. United States.
Findikoglu, Alp T, Jia, Quanxi, Arendt, Paul N, Matias, Vladimir, and Choi, Woong. Tue . "Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate". United States. https://www.osti.gov/servlets/purl/989007.
@article{osti_989007,
title = {Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate},
author = {Findikoglu, Alp T and Jia, Quanxi and Arendt, Paul N and Matias, Vladimir and Choi, Woong},
abstractNote = {A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2009},
month = {10}
}

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