Doped carbon nanostructure field emitter arrays for infrared imaging

Patent · 27 October 2009

OSTI ID:989003

Korsah, Kofi ^[1]; Baylor, Larry R ^[2]; Caughman, John B ^[3]; Kisner, Roger A ^[1]; Rack, Philip D ^[1]; Ivanov, Ilia N ^[1]

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1. Knoxville, TN
2. Farragut, TN
3. Oak Ridge, TN

An infrared imaging device and method for making infrared detector(s) having at least one anode, at least one cathode with a substrate electrically connected to a plurality of doped carbon nanostructures; and bias circuitry for applying an electric field between the anode and the cathode such that when infrared photons are adsorbed by the nanostructures the emitted field current is modulated. The detectors can be doped with cesium to lower the work function.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-00OR22725
• Assignee: UT-Battelle, LLC (Oak Ridge, TN)
• Patent Number(s): 7,608,824
• Application Number: 11/858,296
• OSTI ID: 989003
• Country of Publication: United States
• Language: English

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