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Title: High brightness--multiple beamlets source for patterned X-ray production

Abstract

Techniques for controllably directing beamlets to a target substrate are disclosed. The beamlets may be either positive ions or electrons. It has been shown that beamlets may be produced with a diameter of 1 .mu.m, with inter-aperture spacings of 12 .mu.m. An array of such beamlets, may be used for maskless lithography. By step-wise movement of the beamlets relative to the target substrate, individual devices may be directly e-beam written. Ion beams may be directly written as well. Due to the high brightness of the beamlets from extraction from a multicusp source, exposure times for lithographic exposure are thought to be minimized. Alternatively, the beamlets may be electrons striking a high Z material for X-ray production, thereafter collimated to provide patterned X-ray exposures such as those used in CAT scans. Such a device may be used for remote detection of explosives.

Inventors:
 [1];  [2];  [3];  [4];  [2]
  1. Hercules, CA
  2. Albany, CA
  3. Oakland, CA
  4. El Cerrito, CA
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
988986
Patent Number(s):
7,609,815
Application Number:
11/757,137
Assignee:
The Regents of the University of California (Oakland, CA) LBNL
DOE Contract Number:  
AC02-05CH11231
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Leung, Ka-Ngo, Ji, Qing, Barletta, William A, Jiang, Ximan, and Ji, Lili. High brightness--multiple beamlets source for patterned X-ray production. United States: N. p., 2009. Web.
Leung, Ka-Ngo, Ji, Qing, Barletta, William A, Jiang, Ximan, & Ji, Lili. High brightness--multiple beamlets source for patterned X-ray production. United States.
Leung, Ka-Ngo, Ji, Qing, Barletta, William A, Jiang, Ximan, and Ji, Lili. Tue . "High brightness--multiple beamlets source for patterned X-ray production". United States. doi:. https://www.osti.gov/servlets/purl/988986.
@article{osti_988986,
title = {High brightness--multiple beamlets source for patterned X-ray production},
author = {Leung, Ka-Ngo and Ji, Qing and Barletta, William A and Jiang, Ximan and Ji, Lili},
abstractNote = {Techniques for controllably directing beamlets to a target substrate are disclosed. The beamlets may be either positive ions or electrons. It has been shown that beamlets may be produced with a diameter of 1 .mu.m, with inter-aperture spacings of 12 .mu.m. An array of such beamlets, may be used for maskless lithography. By step-wise movement of the beamlets relative to the target substrate, individual devices may be directly e-beam written. Ion beams may be directly written as well. Due to the high brightness of the beamlets from extraction from a multicusp source, exposure times for lithographic exposure are thought to be minimized. Alternatively, the beamlets may be electrons striking a high Z material for X-ray production, thereafter collimated to provide patterned X-ray exposures such as those used in CAT scans. Such a device may be used for remote detection of explosives.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 27 00:00:00 EDT 2009},
month = {Tue Oct 27 00:00:00 EDT 2009}
}

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