Ultratough CVD single crystal diamond and three dimensional growth thereof

Hemley, Russell J; Mao, Ho-kwang; Yan, Chih-shiue

Title: Ultratough CVD single crystal diamond and three dimensional growth thereof

Patent · Tue Sep 29 00:00:00 EDT 2009

OSTI ID:988682

Hemley, Russell J ^[1]; Mao, Ho-kwang ^[1]; Yan, Chih-shiue ^[1]

Washington, DC

The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m.sup.1/2. The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m.sup.1/2. The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.

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Research Organization:: California Institute of Technology (CalTech), Pasadena, CA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: FG03-98NV13367

Assignee:: Carnegie Institution of Washington (Washington, DC)

Patent Number(s):: 7,594,968

Application Number:: 11/222,224

OSTI ID:: 988682

Country of Publication:: United States

Language:: English

References (26)

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