Thermal properties of silicon nitride beams below 1 Kelvin.
We have investigated the thermal transport of long, narrow beams of silicon nitride at cryogenic temperatures. Simultaneously employing a superconducting Transition Edge Sensor (TES) as both a heater and a sensor, we measured the thermal conductance of 1 {micro}m thick silicon nitride beams of different lateral dimensions. Based upon these measurements, we calculate the thermal parameters of the beams. We utilize a boundary limited phonon scattering model and assume the phonon mean free path to be temperature independent in the calculation. In the temperature range from 300 mK to 530 mK, the following results are obtained for 20 (30) {micro}m beams: the volume heat capacity is 0.083 T+0.509 T{sup 3} J/m{sup 3}-K, the width dependent phonon mean free path is 9.60 (11.05) {micro}m, and the width dependent thermal conductivity is 5.60 x 10{sup -3} T+3.41 x 10{sup -2} T{sup 3} (6.50 x 10{sup -3} T+3.93 x 10{sup -2} T{sup 3}) W/m-K.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC); National Science Foundation (NSF); NIST Quantum Devices Group; Physics Frontier Center Grant; Kavli Foundation; Gordon and Betty Moore Foundation
- DOE Contract Number:
- DE-AC02-06CH11357
- OSTI ID:
- 988672
- Report Number(s):
- ANL/MSD/CP-64635; TRN: US1006708
- Journal Information:
- AIP Conf. Proc., Vol. 1219, Issue 1 ; 2010; Conference: 2009 Cryogenic Engineering Conference and International Materials Conference (CEC-ICMC); Jun. 28, 2009 - Jul. 2, 2009; Tucson, AZ
- Country of Publication:
- United States
- Language:
- ENGLISH
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