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Title: Thermodynamic aspects of the doping of cadmium telluride with gallium

Abstract

The process of the doping of CdTe with Ga (donor impurity) has been studied insufficiently. Earlier, using a radioactive tracer technique, we studied the segregation of Ga in CdTe single crystals grown by the Bridgman technique. In addition, the temperature dependent diffusivity of Ga in CdTe was determined for maximal cadmium vapor pressure p{sub Cd,max}. The activation enthalpy of diffusion found for Ga dopant in CdTe (1.78 eV) is close to the respective value for the doubly ionized cadmium vacancy V{sub Cd}{sup {double_prime}}. Therefore, one can conclude that Ga diffusion proceeds by a vacancy mechanism. The studies of Ga solubility in CdTe vs. temperature at p{sub Cd,max} showed the maximal solubility (1.5 x 10{sup 20} at./cm{sup 3}) to be attained at 1070 K and gave the enthalpy of dissolution for Ga as 1.12 eV. There has been no systematic study of the electrical properties of CdTe(Ga) single crystals; the results reported so far have been confined to temperatures near 300 K. An approximate model developed for the high-temperature equilibrium of defects in CdTe doped with Ga provides a satisfactory description of the electrical properties of the material at elevated temperatures. The enthalpy of incorporation of the neutral Ga atom intomore » the lattice of CdTe is -1.33 eV, thus incorporation into the lattice of CdTe is energetically less favorable for Ga than for In.« less

Authors:
; ;  [1]
  1. Chernovtsy State Univ. (Ukraine)
Publication Date:
OSTI Identifier:
98710
Resource Type:
Journal Article
Journal Name:
Inorganic Materials
Additional Journal Information:
Journal Volume: 30; Journal Issue: 8; Other Information: PBD: Aug 1994; TN: Translated from Neorganicheskie Materialy; 30: No. 8, 1037-1039(1994)
Country of Publication:
United States
Language:
English
Subject:
40 CHEMISTRY; GALLIUM; METALLURGICAL EFFECTS; CADMIUM TELLURIDES; ELECTRICAL PROPERTIES; CHEMICAL REACTION KINETICS; CRYSTAL DOPING; DEFECTS; MONOCRYSTALS; TEMPERATURE DEPENDENCE; FORMATION FREE ENTHALPY

Citation Formats

Fochuk, P M, Panchuk, O E, and Feichuk, P I. Thermodynamic aspects of the doping of cadmium telluride with gallium. United States: N. p., 1994. Web.
Fochuk, P M, Panchuk, O E, & Feichuk, P I. Thermodynamic aspects of the doping of cadmium telluride with gallium. United States.
Fochuk, P M, Panchuk, O E, and Feichuk, P I. Mon . "Thermodynamic aspects of the doping of cadmium telluride with gallium". United States.
@article{osti_98710,
title = {Thermodynamic aspects of the doping of cadmium telluride with gallium},
author = {Fochuk, P M and Panchuk, O E and Feichuk, P I},
abstractNote = {The process of the doping of CdTe with Ga (donor impurity) has been studied insufficiently. Earlier, using a radioactive tracer technique, we studied the segregation of Ga in CdTe single crystals grown by the Bridgman technique. In addition, the temperature dependent diffusivity of Ga in CdTe was determined for maximal cadmium vapor pressure p{sub Cd,max}. The activation enthalpy of diffusion found for Ga dopant in CdTe (1.78 eV) is close to the respective value for the doubly ionized cadmium vacancy V{sub Cd}{sup {double_prime}}. Therefore, one can conclude that Ga diffusion proceeds by a vacancy mechanism. The studies of Ga solubility in CdTe vs. temperature at p{sub Cd,max} showed the maximal solubility (1.5 x 10{sup 20} at./cm{sup 3}) to be attained at 1070 K and gave the enthalpy of dissolution for Ga as 1.12 eV. There has been no systematic study of the electrical properties of CdTe(Ga) single crystals; the results reported so far have been confined to temperatures near 300 K. An approximate model developed for the high-temperature equilibrium of defects in CdTe doped with Ga provides a satisfactory description of the electrical properties of the material at elevated temperatures. The enthalpy of incorporation of the neutral Ga atom into the lattice of CdTe is -1.33 eV, thus incorporation into the lattice of CdTe is energetically less favorable for Ga than for In.},
doi = {},
url = {https://www.osti.gov/biblio/98710}, journal = {Inorganic Materials},
number = 8,
volume = 30,
place = {United States},
year = {1994},
month = {8}
}