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Title: Recent Developments in the processing of P-type Spiral Drift Detectors

Abstract

Recently we have designed and developed various methods of fabricating a new p-type drift detector (PDD), which possesses one-sided hexagonal spiral shaped cathodes around the center anode. We have utilized gettering methods in order to remove detrimental impurities from the critical device-active area and transport them to a different part of the wafer. In this work, we discuss the intrinsic and the extrinsic gettering methods involved in the process. In the intrinsic gettering, we use the magnetic Czochralski silicon material that has a high resistivity ({ge} 2 k{Omega}cm). This material naturally has high oxygen concentration (about 10{sup 18}/cm{sup 3}), and under a high temperature cycling it provides nucleation sites where the impurities can precipitate. In the extrinsic process we utilize the phosphorus implantation to form a region with increased impurity solubility. The goal of these processes is to reduce the leakage current of the detector thus improving its energy resolution.

Authors:
; ; ;
Publication Date:
Research Org.:
BROOKHAVEN NATIONAL LABORATORY (BNL)
Sponsoring Org.:
Doe - Office Of Science
OSTI Identifier:
985808
Report Number(s):
BNL-93733-2010-JA
KA11-01-020; TRN: US1006222
DOE Contract Number:  
DE-AC02-98CH10886
Resource Type:
Journal Article
Resource Relation:
Conference: IEEE 2004 Nuclear Science Symposium; Rome, Italy; 20041019 through 20041023
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; CATHODES; ENERGY RESOLUTION; GETTERING; IMPURITIES; LEAKAGE CURRENT; NUCLEATION; OXYGEN; PHOSPHORUS; PROCESSING; SILICON; SOLUBILITY; TRANSPORT; P-type; spiral drift detectors

Citation Formats

Chen, W., Gatti, E., Li, Z., and Rehak, P. Recent Developments in the processing of P-type Spiral Drift Detectors. United States: N. p., 2004. Web. doi:10.1109/NSSMIC.2004.1462379.
Chen, W., Gatti, E., Li, Z., & Rehak, P. Recent Developments in the processing of P-type Spiral Drift Detectors. United States. doi:10.1109/NSSMIC.2004.1462379.
Chen, W., Gatti, E., Li, Z., and Rehak, P. Wed . "Recent Developments in the processing of P-type Spiral Drift Detectors". United States. doi:10.1109/NSSMIC.2004.1462379.
@article{osti_985808,
title = {Recent Developments in the processing of P-type Spiral Drift Detectors},
author = {Chen, W. and Gatti, E. and Li, Z. and Rehak, P.},
abstractNote = {Recently we have designed and developed various methods of fabricating a new p-type drift detector (PDD), which possesses one-sided hexagonal spiral shaped cathodes around the center anode. We have utilized gettering methods in order to remove detrimental impurities from the critical device-active area and transport them to a different part of the wafer. In this work, we discuss the intrinsic and the extrinsic gettering methods involved in the process. In the intrinsic gettering, we use the magnetic Czochralski silicon material that has a high resistivity ({ge} 2 k{Omega}cm). This material naturally has high oxygen concentration (about 10{sup 18}/cm{sup 3}), and under a high temperature cycling it provides nucleation sites where the impurities can precipitate. In the extrinsic process we utilize the phosphorus implantation to form a region with increased impurity solubility. The goal of these processes is to reduce the leakage current of the detector thus improving its energy resolution.},
doi = {10.1109/NSSMIC.2004.1462379},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2004},
month = {12}
}