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Title: Ultra-high current density thin-film Si diode

Abstract

A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

Inventors:
 [1]
  1. Littleton, CO
Publication Date:
Research Org.:
Midwest Research Institute
Sponsoring Org.:
USDOE
OSTI Identifier:
985549
Patent Number(s):
7,361,406
Application Number:
10/488,902
Assignee:
Wang, Qi (Littleton, CO) GFO
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Wang, Qi. Ultra-high current density thin-film Si diode. United States: N. p., 2008. Web.
Wang, Qi. Ultra-high current density thin-film Si diode. United States.
Wang, Qi. Tue . "Ultra-high current density thin-film Si diode". United States. https://www.osti.gov/servlets/purl/985549.
@article{osti_985549,
title = {Ultra-high current density thin-film Si diode},
author = {Wang, Qi},
abstractNote = {A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {4}
}

Patent:

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