Method to control residual stress in a film structure and a system thereof
Patent
·
OSTI ID:985541
A method for controlling residual stress in a structure in a MEMS device and a structure thereof includes selecting a total thickness and an overall equivalent stress for the structure. A thickness for each of at least one set of alternating first and second layers is determined to control an internal stress with respect to a neutral axis for each of the at least alternating first and second layers and to form the structure based on the selected total thickness and the selected overall equivalent stress. Each of the at least alternating first and second layers is deposited to the determined thickness for each of the at least alternating first and second layers to form the structure.
- Research Organization:
- Infotonics Tech Center
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG02-02ER63410
- Assignee:
- USDOE; Rochester Institute of Technology (Rochester, NY)
- Patent Number(s):
- 7,470,462
- Application Number:
- 11/061,429
- OSTI ID:
- 985541
- Country of Publication:
- United States
- Language:
- English
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