Nanocrystal structures

Eisler, Hans J; Sundar, Vikram C; Walsh, Michael E; Klimov, Victor I; Bawendi, Moungi G; Smith, Henry I

Nanocrystal structures

Patent · 29 December 2008

OSTI ID:985540

Eisler, Hans J ^[1]; Sundar, Vikram C ^[1]; Walsh, Michael E ^[2]; Klimov, Victor I ^[3]; Bawendi, Moungi G ^[4]; Smith, Henry I ^[5]

Stoneham, MA
Everett, MA
Los Alamos, NM
Cambridge, MA
Sudbury, MA

A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.

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Research Organization:: Massachusetts Institute of Technology (Cambridge, MA)

Sponsoring Organization:: USDOE

Assignee:: Massachusetts Institute of Technology (Cambridge, MA)

Patent Number(s):: 7,470,473

Application Number:: 11/594,732

OSTI ID:: 985540

Country of Publication:: United States

Language:: English

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