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Title: Nanocrystal structures

Abstract

A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.

Inventors:
 [1];  [1];  [2];  [3];  [4];  [5]
  1. Stoneham, MA
  2. Everett, MA
  3. Los Alamos, NM
  4. Cambridge, MA
  5. Sudbury, MA
Publication Date:
Research Org.:
Massachusetts Institute of Technology (Cambridge, MA)
Sponsoring Org.:
USDOE
OSTI Identifier:
985540
Patent Number(s):
7,470,473
Application Number:
11/594,732
Assignee:
Massachusetts Institute of Technology (Cambridge, MA) OSTI
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Eisler, Hans J, Sundar, Vikram C, Walsh, Michael E, Klimov, Victor I, Bawendi, Moungi G, and Smith, Henry I. Nanocrystal structures. United States: N. p., 2008. Web.
Eisler, Hans J, Sundar, Vikram C, Walsh, Michael E, Klimov, Victor I, Bawendi, Moungi G, & Smith, Henry I. Nanocrystal structures. United States.
Eisler, Hans J, Sundar, Vikram C, Walsh, Michael E, Klimov, Victor I, Bawendi, Moungi G, and Smith, Henry I. Tue . "Nanocrystal structures". United States. https://www.osti.gov/servlets/purl/985540.
@article{osti_985540,
title = {Nanocrystal structures},
author = {Eisler, Hans J and Sundar, Vikram C and Walsh, Michael E and Klimov, Victor I and Bawendi, Moungi G and Smith, Henry I},
abstractNote = {A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {12}
}

Patent:

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