Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition

Han, Jung; Su, Jie

Title: Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition

Patent · Tue Aug 05 00:00:00 EDT 2008

OSTI ID:985518

Han, Jung ^[1]; Su, Jie ^[2]

Woodbridge, CT
New Haven, CT

Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. <1010> M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M-plane AlN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self-aligned nanowire devices, interconnects, and networks.

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Research Organization:: National Energy Technology Laboratory (NETL), Pittsburgh, PA, Morgantown, WV (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: FC26-03NT41941

Assignee:: Yale University (New Haven, CT)

Patent Number(s):: 7,407,872

Application Number:: 11/207,226; TRN: US201016%%2033

OSTI ID:: 985518

Country of Publication:: United States

Language:: English

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