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Title: Continuous growth of single-wall carbon nanotubes using chemical vapor deposition

Patent ·
OSTI ID:985412

The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

Research Organization:
Midwest Research Institute, Kansas City, MO (United States)
Sponsoring Organization:
USDOE
Assignee:
Honda Motor Co., Ltd. (Tokyo, JP)
Patent Number(s):
7,431,965
Application Number:
10/700,386
OSTI ID:
985412
Country of Publication:
United States
Language:
English

References (2)

Chemical vapor deposition of methane for single-walled carbon nanotubes journal August 1998
Chemical Vapor Deposition Based Synthesis of Carbon Nanotubes and Nanofibers Using a Template Method journal January 1998