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Title: Morphology and Optical Properties of Mg Doped GaNNanowires in Dependence of Growth Temperature

Abstract

The influence of the substrate temperature and Mg doping on the morphological and optical properties of catalyst-free GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111) has been investigated in a large temperaturerange between 665 °C and 785 °C. The density and wire sizes in Mg-doped nanowires are found to change with substrate temperature in a similar way as undoped nanowires. Between 725 °C and 785 °C a trimodal size distribution and an increase of the wire density from 5.0x109 cm-2 to 9.5x109 cm-2 were observed. Transmission electron microscopy indicates that the upper parts of the nanowires are free of structural defects. Raman spectroscopy measurements confirm a high crystalline quality of doped wires, with a line width of the E2 H of 3.3 cm-1 for samples grown at Ts=785 °C. Photoluminescence measurements show a strong influence of Mg on the emission properties, namely the increase of thedonor-acceptor pair emission and its phonon replicas.

Authors:
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
Sponsoring Org.:
Doe - Office Of Science
OSTI Identifier:
983868
Report Number(s):
BNL-93776-2010-JA
Journal ID: ISSN 1454-4164; R&D Project: NC-001; KC020401H; TRN: US201014%%1860
DOE Contract Number:  
DE-AC02-98CH10886
Resource Type:
Journal Article
Journal Name:
Journal of Optoelectronics and Advanced Materials
Additional Journal Information:
Journal Volume: 12; Journal Issue: 6; Journal ID: ISSN 1454-4164
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; 99 GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE; BEAMS; DEFECTS; DENSITY; DISTRIBUTION; EMISSION; GROWTH; LINE WIDTHS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTICAL PROPERTIES; PHONONS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; REPLICAS; SIZE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; WIRES; GaN; MG-doping; Nanowire; MBE; Photo-luminescence; functional nanomaterials

Citation Formats

Sutter, E. Morphology and Optical Properties of Mg Doped GaNNanowires in Dependence of Growth Temperature. United States: N. p., 2010. Web.
Sutter, E. Morphology and Optical Properties of Mg Doped GaNNanowires in Dependence of Growth Temperature. United States.
Sutter, E. 2010. "Morphology and Optical Properties of Mg Doped GaNNanowires in Dependence of Growth Temperature". United States.
@article{osti_983868,
title = {Morphology and Optical Properties of Mg Doped GaNNanowires in Dependence of Growth Temperature},
author = {Sutter, E},
abstractNote = {The influence of the substrate temperature and Mg doping on the morphological and optical properties of catalyst-free GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111) has been investigated in a large temperaturerange between 665 °C and 785 °C. The density and wire sizes in Mg-doped nanowires are found to change with substrate temperature in a similar way as undoped nanowires. Between 725 °C and 785 °C a trimodal size distribution and an increase of the wire density from 5.0x109 cm-2 to 9.5x109 cm-2 were observed. Transmission electron microscopy indicates that the upper parts of the nanowires are free of structural defects. Raman spectroscopy measurements confirm a high crystalline quality of doped wires, with a line width of the E2 H of 3.3 cm-1 for samples grown at Ts=785 °C. Photoluminescence measurements show a strong influence of Mg on the emission properties, namely the increase of thedonor-acceptor pair emission and its phonon replicas.},
doi = {},
url = {https://www.osti.gov/biblio/983868}, journal = {Journal of Optoelectronics and Advanced Materials},
issn = {1454-4164},
number = 6,
volume = 12,
place = {United States},
year = {2010},
month = {6}
}