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Title: Fundamentals and technology for monolithically integrated RF MEMS switches with ultra-nanocrystaline diamond dielectric/CMOS devices.

Abstract

Most current capacitive RF-MEMS switch technology is based on conventional dielectric materials such as SiO{sub 2} and Si{sub 3}N{sub 4}. However, they suffer not only from charging problems but also stiction problems leading to premature failure of an RF-MEMS switch. Ultrananocrystalline diamond (UNCD{sup (R)}) (2-5 nm grains) and nanocrystalline diamond (NCD) (10-100 nm grains) films exhibit one of the highest Young's modulus ({approx} 980-1100 GPa) and demonstrated MEMS resonators with the highest quality factor (Q {ge} 10,000 in air for NCD) today, they also exhibit the lowest force of adhesion among MEMS/NEMS materials ({approx}10 mJ/m{sup 2}-close to van der Waals attractive force for UNCD) demonstrated today. Finally, UNCD exhibits dielectric properties (fast discharge) superior to those of Si and SiO{sub 2}, as shown in this paper. Thus, UNCD and NCD films provide promising platform materials beyond Si for a new generation of important classes of high-performance MEMS/NEMS devices.

Authors:
; ; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
983468
Report Number(s):
ANL/CNM/CP-66608
Journal ID: 0277-786X; TRN: US201014%%496
DOE Contract Number:  
DE-AC02-06CH11357
Resource Type:
Conference
Resource Relation:
Conference: SPIE Defense, Sensing and Security 2010 (DSS 2010); Apr. 5, 2010 - Apr. 9, 2010; Orlando, FL
Country of Publication:
United States
Language:
ENGLISH
Subject:
36 MATERIALS SCIENCE; ADHESION; AIR; DIAMONDS; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; QUALITY FACTOR; RESONATORS; SECURITY; SWITCHES

Citation Formats

Auciello, O, Sumant, A, Goldsmith, C, O'Brien, S, Sampath, S, Gudeman, C, Wang, W, Hwang, J, Swonger, J, Carlisle, J, Balachandran, S, MEMtronics, Corp, Innovative Micro Technology, Lehigh Univ., Semiconductor, Peregrine, and Advanced Diamond Technologies. Fundamentals and technology for monolithically integrated RF MEMS switches with ultra-nanocrystaline diamond dielectric/CMOS devices.. United States: N. p., 2010. Web. doi:10.1117/12.851491.
Auciello, O, Sumant, A, Goldsmith, C, O'Brien, S, Sampath, S, Gudeman, C, Wang, W, Hwang, J, Swonger, J, Carlisle, J, Balachandran, S, MEMtronics, Corp, Innovative Micro Technology, Lehigh Univ., Semiconductor, Peregrine, & Advanced Diamond Technologies. Fundamentals and technology for monolithically integrated RF MEMS switches with ultra-nanocrystaline diamond dielectric/CMOS devices.. United States. doi:10.1117/12.851491.
Auciello, O, Sumant, A, Goldsmith, C, O'Brien, S, Sampath, S, Gudeman, C, Wang, W, Hwang, J, Swonger, J, Carlisle, J, Balachandran, S, MEMtronics, Corp, Innovative Micro Technology, Lehigh Univ., Semiconductor, Peregrine, and Advanced Diamond Technologies. Fri . "Fundamentals and technology for monolithically integrated RF MEMS switches with ultra-nanocrystaline diamond dielectric/CMOS devices.". United States. doi:10.1117/12.851491.
@article{osti_983468,
title = {Fundamentals and technology for monolithically integrated RF MEMS switches with ultra-nanocrystaline diamond dielectric/CMOS devices.},
author = {Auciello, O and Sumant, A and Goldsmith, C and O'Brien, S and Sampath, S and Gudeman, C and Wang, W and Hwang, J and Swonger, J and Carlisle, J and Balachandran, S and MEMtronics, Corp and Innovative Micro Technology and Lehigh Univ. and Semiconductor, Peregrine and Advanced Diamond Technologies},
abstractNote = {Most current capacitive RF-MEMS switch technology is based on conventional dielectric materials such as SiO{sub 2} and Si{sub 3}N{sub 4}. However, they suffer not only from charging problems but also stiction problems leading to premature failure of an RF-MEMS switch. Ultrananocrystalline diamond (UNCD{sup (R)}) (2-5 nm grains) and nanocrystalline diamond (NCD) (10-100 nm grains) films exhibit one of the highest Young's modulus ({approx} 980-1100 GPa) and demonstrated MEMS resonators with the highest quality factor (Q {ge} 10,000 in air for NCD) today, they also exhibit the lowest force of adhesion among MEMS/NEMS materials ({approx}10 mJ/m{sup 2}-close to van der Waals attractive force for UNCD) demonstrated today. Finally, UNCD exhibits dielectric properties (fast discharge) superior to those of Si and SiO{sub 2}, as shown in this paper. Thus, UNCD and NCD films provide promising platform materials beyond Si for a new generation of important classes of high-performance MEMS/NEMS devices.},
doi = {10.1117/12.851491},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {1}
}

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