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Title: Effect of deposition temperature of TiO{sub 2} on the piezoelectric property of PbTiO{sub 3} film grown by PbO gas phase reaction sputtering.

Abstract

A 17 nm thick PbTiO{sub 3} (PTO) films were fabricated via PbO gas phase reaction with TiO{sub 2} starting layer in a sputtering chamber. The influence of deposition temperature of TiO{sub 2} on the piezoelectric properties of PTO thin films was investigated. The remnant piezoresponse of PTO films nonlinearly increased as a function of TiO{sub 2} deposition temperature, which is correlated with the increase in average grain diameter of PTO film. As grain size increases, the restriction on remnant piezoresponse imposed by the grain boundary via coupling between local strain and polarization becomes less pronounced, which results in the increase in remnant piezoresponse. Furthermore, we found that the vertical shift in piezoresponse hysteresis loops is closely related to the residual stress state. A strong correlation between the negative vertical shift and the residual tensile stress reveals that residual stress on the resulting PTO film contributed to the asymmetric piezoelectric property.

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC); National Research Foundation of Korea (NRF)
OSTI Identifier:
982669
Report Number(s):
ANL/MSD/JA-65963
Journal ID: 0021-8979; TRN: US201015%%1276
DOE Contract Number:  
DE-AC02-06CH11357
Resource Type:
Journal Article
Journal Name:
J. Appl. Phys.
Additional Journal Information:
Journal Volume: 107; Journal Issue: May 15, 2010
Country of Publication:
United States
Language:
ENGLISH
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CORRELATIONS; COUPLING; DEPOSITION; FILMS; FUNCTIONS; GRAIN SIZE; HYSTERESIS; LAYERS; POLARIZATION; SPUTTERING; STRAINS; THIN FILMS

Citation Formats

Kim, J, Hong, S, Buhlmann, S, Kim, Y, Park, M, Kim, Y K, No, K, Materials Science Division, KAIST,, Imperial, Coll, and Samsung Electronics Co. Effect of deposition temperature of TiO{sub 2} on the piezoelectric property of PbTiO{sub 3} film grown by PbO gas phase reaction sputtering.. United States: N. p., 2010. Web. doi:10.1063/1.3406148.
Kim, J, Hong, S, Buhlmann, S, Kim, Y, Park, M, Kim, Y K, No, K, Materials Science Division, KAIST,, Imperial, Coll, & Samsung Electronics Co. Effect of deposition temperature of TiO{sub 2} on the piezoelectric property of PbTiO{sub 3} film grown by PbO gas phase reaction sputtering.. United States. https://doi.org/10.1063/1.3406148
Kim, J, Hong, S, Buhlmann, S, Kim, Y, Park, M, Kim, Y K, No, K, Materials Science Division, KAIST,, Imperial, Coll, and Samsung Electronics Co. 2010. "Effect of deposition temperature of TiO{sub 2} on the piezoelectric property of PbTiO{sub 3} film grown by PbO gas phase reaction sputtering.". United States. https://doi.org/10.1063/1.3406148.
@article{osti_982669,
title = {Effect of deposition temperature of TiO{sub 2} on the piezoelectric property of PbTiO{sub 3} film grown by PbO gas phase reaction sputtering.},
author = {Kim, J and Hong, S and Buhlmann, S and Kim, Y and Park, M and Kim, Y K and No, K and Materials Science Division and KAIST, and Imperial, Coll and Samsung Electronics Co.},
abstractNote = {A 17 nm thick PbTiO{sub 3} (PTO) films were fabricated via PbO gas phase reaction with TiO{sub 2} starting layer in a sputtering chamber. The influence of deposition temperature of TiO{sub 2} on the piezoelectric properties of PTO thin films was investigated. The remnant piezoresponse of PTO films nonlinearly increased as a function of TiO{sub 2} deposition temperature, which is correlated with the increase in average grain diameter of PTO film. As grain size increases, the restriction on remnant piezoresponse imposed by the grain boundary via coupling between local strain and polarization becomes less pronounced, which results in the increase in remnant piezoresponse. Furthermore, we found that the vertical shift in piezoresponse hysteresis loops is closely related to the residual stress state. A strong correlation between the negative vertical shift and the residual tensile stress reveals that residual stress on the resulting PTO film contributed to the asymmetric piezoelectric property.},
doi = {10.1063/1.3406148},
url = {https://www.osti.gov/biblio/982669}, journal = {J. Appl. Phys.},
number = May 15, 2010,
volume = 107,
place = {United States},
year = {2010},
month = {5}
}