Title: ULTRA-LOW-ENERGY HIGH-CURRENT ION SOURCE

Abstract

The technical objective of the project was to develop an ultra-low-energy, high-intensity ion source (ULEHIIS) for materials processing in high-technology fields including semiconductors, micro-magnetics and optics/opto-electronics. In its primary application, this ion source can be incorporated into the 4Wave thin-film deposition technique called biased target ion-beam deposition (BTIBD), which is a deposition technique based on sputtering (without magnetic field, i.e., not the typical magnetron sputtering). It is a technological challenge because the laws of space charge limited current (Child-Langmuir) set strict limits of how much current can be extracted from a reservoir of ions, such as a suitable discharge plasma. The solution to the problem was an innovative dual-discharge system without the use of extraction grids.

Authors:

Anders, Andre; Yushkov, Georgy Yu.; Baldwin, David A.

Publication Date:

Fri Nov 20 00:00:00 EST 2009

Research Org.:

Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Org.:

Accelerator& Fusion Research Division

OSTI Identifier:

981525

Report Number(s):

LBNL-3026E
TRN: US1003875

DOE Contract Number:

DE-AC02-05CH11231

Resource Type:

Technical Report

Country of Publication:

United States

Language:

English

Subject:

70; DEPOSITION; ION SOURCES; MAGNETIC FIELDS; MAGNETRONS; PLASMA; PROCESSING; SPACE CHARGE; SPUTTERING; TARGETS; ion source, low energy, high current, gas, semiconductor processing