Impurity Gettering Effect of Te Inclusions in Cdznte Single Crystals
Journal Article
·
· Journal of Crystal Growth
OSTI ID:980255
The local impurity distribution in Te inclusions of CdZnTe (CZT) crystal was investigated by the time-of-flight secondary ion mass spectrometry (Tof-SIMS) technique. Direct evidence of impurity gettering in Te inclusions has been observed for the first time. The impurity gettering in Te inclusions originated from the diffusion mechanism during crystal growth and segregation mechanism during crystal cooling. This phenomenon is meaningful, because it reveals how Te inclusions affect CZT properties and provides a possible approach to reduce the impurities in CZT by the way of removing Te inclusions.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
- Sponsoring Organization:
- Doe - Office Of Science
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 980255
- Report Number(s):
- BNL-93173-2010-JA; JCRGAE; TRN: US201015%%1640
- Journal Information:
- Journal of Crystal Growth, Vol. 311, Issue 1; ISSN 0022-0248
- Country of Publication:
- United States
- Language:
- English
Similar Records
TE INCLUSIONS AND THEIR RELATIONSHIP TO THE PERFORMANCE OF CDZNTE DETECTORS.
Evaluation of electron lifetime for Te inclusions free CdZnTe
Effect of Te Inclusions on the Performance of Cdznte Radiation Detectors
Conference
·
Sun Aug 13 00:00:00 EDT 2006
·
OSTI ID:980255
+6 more
Evaluation of electron lifetime for Te inclusions free CdZnTe
Journal Article
·
Sat Jul 01 00:00:00 EDT 2023
· Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
·
OSTI ID:980255
Effect of Te Inclusions on the Performance of Cdznte Radiation Detectors
Journal Article
·
Thu Jan 01 00:00:00 EST 2009
· IEEE Transactions on Nuclear Science
·
OSTI ID:980255
+6 more