High Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers
Journal Article
·
· Materials Science Forum
Threading edge dislocations (TEDs) in a 4H-SiC epitaxial layer are investigated using high-resolution synchrotron topography. Six types of TED image are confirmed to correspond to the Burgers vector directions by a comparison of computer simulated images and observed topography images in crystal boundaries. Using a mapping method, a wide spatial distribution of the six types of TED is examined in a quarter section of a 2-inch wafer.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
- Sponsoring Organization:
- Doe - Office Of Science
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 980232
- Report Number(s):
- BNL-93150-2010-JA; MSFOEP; TRN: US1005442
- Journal Information:
- Materials Science Forum, Vol. 600-603; ISSN 0255-5476
- Country of Publication:
- United States
- Language:
- English
Similar Records
Investigation of Character and Spatial Distribution of Threading Edge Dislocations in 4H-SiC Epilayers by High-Resolution Topography
High-Resolution X-ray Topography of Dislocations in 4H-SiC Epilayers
Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method
Journal Article
·
Thu Jan 01 00:00:00 EST 2009
· Journal of Crystal Growth
·
OSTI ID:980232
+2 more
High-Resolution X-ray Topography of Dislocations in 4H-SiC Epilayers
Journal Article
·
Mon Jan 01 00:00:00 EST 2007
· Journal of Materials Research
·
OSTI ID:980232
+1 more
Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method
Journal Article
·
Sat Oct 01 00:00:00 EDT 2016
· Journal of Crystal Growth
·
OSTI ID:980232
+5 more