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Title: Depth-resolved residual strain in MoN/Mo nanocrystalline films

Abstract

The authors have applied cross-sectional x-ray microdiffraction to measure depth-resolved in-plane residual strain in nanocrystalline MoN/Mo bilayer films deposited on Si. Compressive strains with large gradients were found in the as-deposited films. After thermal annealing, the strain profiles and diffraction peak widths of the MoN and Mo layers were altered. These findings provide insights on the relationship between defects introduced during film processing and the effect of annealing on the structure and properties of magnetron-sputtered nanocrystalline films.

Authors:
 [1];  [1];  [1];  [1];  [2];  [1]
  1. Argonne National Laboratory (ANL)
  2. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
979275
DOE Contract Number:
DE-AC05-00OR22725
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 89; Journal Issue: 17
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; DEFECTS; DIFFRACTION; PROCESSING; STRAINS

Citation Formats

Chen, Gang, Singh, Dileep, Eryilmaz, Osman L, Routbort, Jules, Larson, Ben C, and Liu, W. Depth-resolved residual strain in MoN/Mo nanocrystalline films. United States: N. p., 2006. Web. doi:10.1063/1.2364131.
Chen, Gang, Singh, Dileep, Eryilmaz, Osman L, Routbort, Jules, Larson, Ben C, & Liu, W. Depth-resolved residual strain in MoN/Mo nanocrystalline films. United States. doi:10.1063/1.2364131.
Chen, Gang, Singh, Dileep, Eryilmaz, Osman L, Routbort, Jules, Larson, Ben C, and Liu, W. Sun . "Depth-resolved residual strain in MoN/Mo nanocrystalline films". United States. doi:10.1063/1.2364131.
@article{osti_979275,
title = {Depth-resolved residual strain in MoN/Mo nanocrystalline films},
author = {Chen, Gang and Singh, Dileep and Eryilmaz, Osman L and Routbort, Jules and Larson, Ben C and Liu, W.},
abstractNote = {The authors have applied cross-sectional x-ray microdiffraction to measure depth-resolved in-plane residual strain in nanocrystalline MoN/Mo bilayer films deposited on Si. Compressive strains with large gradients were found in the as-deposited films. After thermal annealing, the strain profiles and diffraction peak widths of the MoN and Mo layers were altered. These findings provide insights on the relationship between defects introduced during film processing and the effect of annealing on the structure and properties of magnetron-sputtered nanocrystalline films.},
doi = {10.1063/1.2364131},
journal = {Applied Physics Letters},
number = 17,
volume = 89,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2006},
month = {Sun Jan 01 00:00:00 EST 2006}
}
  • The authors have applied cross-sectional x-ray microdiffraction to measure depth-resolved in-plane residual strain in nanocrystalline MoN/Mo bilayer films deposited on Si. Compressive strains with large gradients were found in the as-deposited films. After thermal annealing, the strain profiles and diffraction peak widths of the MoN and Mo layers were altered. These findings provide insights on the relationship between defects introduced during film processing and the effect of annealing on the structure and properties of magnetron-sputtered nanocrystalline films.
  • A study of the relationship between strain and the incorporation of group III elements in ternary InGaN and InAlN grown by molecular beam epitaxy is reported. Using X-ray Photoelectron Spectroscopy compositional depth profiles with x-ray diffraction, we are able to find a clear relationship between strain and In incorporation including tensile-strained InAlN which has, to date, not been studied. The results show that fully strained films contain homogeneous indium composition while partially relaxed films have a non-homogeneous indium composition with depth. These results can be interpreted by considering the impurity formation energies of indium in host lattices.
  • Cited by 7
  • The in-plane London penetration depth, λ ( T ) , was measured in single crystals of the iron-chalcogenide superconductors Fe 1.03 ( Te 0.63 Se 0.37 ) and Fe 1.06 ( Te 0.88 S 0.14 ) by using a radio-frequency tunnel diode resonator. Similar to the iron-arsenides and in stark contrast to the iron-phosphides, iron-chalcogenides exhibit a nearly quadratic temperature variation of λ ( T ) at low temperatures. The absolute value of the penetration depth in the T → 0 limit was determined for Fe 1.03 ( Te 0.63 Se 0.37 ) by using an Al coating technique, givingmore » λ ( 0 ) ≈ 560 ± 20 nm . The superfluid density ρ s ( T ) = λ 2 ( 0 ) / λ 2 ( T ) was fitted with a self-consistent two-gap γ model. While two different gaps are needed to describe the full-range temperature variation in ρ s ( T ) , a nonexponential low-temperature behavior requires pair-breaking scattering, and therefore an unconventional (e.g., s ± or nodal) order parameter.« less
  • The electronic structures of B1 MoN, fcc Mo/sub 2/N, and hexagonal MoN were observed by photoelectron spectroscopic measurement. The B1-MoN phase has been predicted to be a high-T/sub c/ superconductor because of a large density of states at Fermi level. The observed electronic structure of the stoichiometric B1-MoN phase is different from that of the real B1-MoN type. The nitrogen excess B1-MoN/sub x/ (x> or =1.3) phase, however, shows the B1-type electronic structure. This is explained by the occurrence of a nitrogen vacancy in the apparent stoichiometric B1 phase and the occupation of the nitrogen vacancy in the nitrogen-excess B1more » phase. This property is related to the previously reported low T/sub c/ of the B1-MoN crystals.« less