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Title: Depth-resolved residual strain in MoN/Mo nanocrystalline films

Abstract

The authors have applied cross-sectional x-ray microdiffraction to measure depth-resolved in-plane residual strain in nanocrystalline MoN/Mo bilayer films deposited on Si. Compressive strains with large gradients were found in the as-deposited films. After thermal annealing, the strain profiles and diffraction peak widths of the MoN and Mo layers were altered. These findings provide insights on the relationship between defects introduced during film processing and the effect of annealing on the structure and properties of magnetron-sputtered nanocrystalline films.

Authors:
 [1];  [1];  [1];  [1];  [2];  [1]
  1. Argonne National Laboratory (ANL)
  2. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
979275
DOE Contract Number:  
DE-AC05-00OR22725
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 89; Journal Issue: 17
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; DEFECTS; DIFFRACTION; PROCESSING; STRAINS

Citation Formats

Chen, Gang, Singh, Dileep, Eryilmaz, Osman L, Routbort, Jules, Larson, Ben C, and Liu, W. Depth-resolved residual strain in MoN/Mo nanocrystalline films. United States: N. p., 2006. Web. doi:10.1063/1.2364131.
Chen, Gang, Singh, Dileep, Eryilmaz, Osman L, Routbort, Jules, Larson, Ben C, & Liu, W. Depth-resolved residual strain in MoN/Mo nanocrystalline films. United States. doi:10.1063/1.2364131.
Chen, Gang, Singh, Dileep, Eryilmaz, Osman L, Routbort, Jules, Larson, Ben C, and Liu, W. Sun . "Depth-resolved residual strain in MoN/Mo nanocrystalline films". United States. doi:10.1063/1.2364131.
@article{osti_979275,
title = {Depth-resolved residual strain in MoN/Mo nanocrystalline films},
author = {Chen, Gang and Singh, Dileep and Eryilmaz, Osman L and Routbort, Jules and Larson, Ben C and Liu, W.},
abstractNote = {The authors have applied cross-sectional x-ray microdiffraction to measure depth-resolved in-plane residual strain in nanocrystalline MoN/Mo bilayer films deposited on Si. Compressive strains with large gradients were found in the as-deposited films. After thermal annealing, the strain profiles and diffraction peak widths of the MoN and Mo layers were altered. These findings provide insights on the relationship between defects introduced during film processing and the effect of annealing on the structure and properties of magnetron-sputtered nanocrystalline films.},
doi = {10.1063/1.2364131},
journal = {Applied Physics Letters},
number = 17,
volume = 89,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2006},
month = {Sun Jan 01 00:00:00 EST 2006}
}