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Title: Spin-dependent tunneling spectroscopy for interface characterization of epitaxial Fe/MgO/Fe magnetic tunnel junctions

Abstract

Low-voltage spin-dependent tunneling spectroscopy of an epitaxial Fe/MgO/Fe magnetic tunnel junction is measured and compared to first-principles calculation of the tunneling conductance. The measured dynamic conductance ($dI/dV$) in the parallel configuration shows distinct asymmetric features as a function of the bias voltage $$V$$. The peaks are independent of barrier thickness, magnetic field, and temperature. From the first-principles calculation, we identify the positive and negative bias spectra corresponding to different types of Fe/MgO interfaces. Tunneling spectroscopy thus can be used as a powerful tool for interface characterization.

Authors:
 [1];  [1];  [1];  [1];  [2];  [3];  [2];  [1]
  1. Institute of Physics, Chinese Academy of Science
  2. University of Oxford
  3. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
979268
DOE Contract Number:  
DE-AC05-00OR22725
Resource Type:
Journal Article
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 81; Journal Issue: 6; Journal ID: ISSN 0031-9007
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CONFIGURATION; MAGNETIC FIELDS; SPECTRA; SPECTROSCOPY; THICKNESS; TUNNELING

Citation Formats

Du, G. X., Wang, Shouguo, Ma, Q. L., Wang, Y., Ward, R. C. C., Zhang, Xiaoguang, Kohn, A., and Han, Prof. X. F. Spin-dependent tunneling spectroscopy for interface characterization of epitaxial Fe/MgO/Fe magnetic tunnel junctions. United States: N. p., 2010. Web. doi:10.1103/PhysRevB.81.064438.
Du, G. X., Wang, Shouguo, Ma, Q. L., Wang, Y., Ward, R. C. C., Zhang, Xiaoguang, Kohn, A., & Han, Prof. X. F. Spin-dependent tunneling spectroscopy for interface characterization of epitaxial Fe/MgO/Fe magnetic tunnel junctions. United States. https://doi.org/10.1103/PhysRevB.81.064438
Du, G. X., Wang, Shouguo, Ma, Q. L., Wang, Y., Ward, R. C. C., Zhang, Xiaoguang, Kohn, A., and Han, Prof. X. F. 2010. "Spin-dependent tunneling spectroscopy for interface characterization of epitaxial Fe/MgO/Fe magnetic tunnel junctions". United States. https://doi.org/10.1103/PhysRevB.81.064438.
@article{osti_979268,
title = {Spin-dependent tunneling spectroscopy for interface characterization of epitaxial Fe/MgO/Fe magnetic tunnel junctions},
author = {Du, G. X. and Wang, Shouguo and Ma, Q. L. and Wang, Y. and Ward, R. C. C. and Zhang, Xiaoguang and Kohn, A. and Han, Prof. X. F.},
abstractNote = {Low-voltage spin-dependent tunneling spectroscopy of an epitaxial Fe/MgO/Fe magnetic tunnel junction is measured and compared to first-principles calculation of the tunneling conductance. The measured dynamic conductance ($dI/dV$) in the parallel configuration shows distinct asymmetric features as a function of the bias voltage $V$. The peaks are independent of barrier thickness, magnetic field, and temperature. From the first-principles calculation, we identify the positive and negative bias spectra corresponding to different types of Fe/MgO interfaces. Tunneling spectroscopy thus can be used as a powerful tool for interface characterization.},
doi = {10.1103/PhysRevB.81.064438},
url = {https://www.osti.gov/biblio/979268}, journal = {Physical Review B},
issn = {0031-9007},
number = 6,
volume = 81,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 2010},
month = {Fri Jan 01 00:00:00 EST 2010}
}