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Title: Nanowire-templated lateral epitaxial growth of non-polar group III nitrides

Patent ·
OSTI ID:978685
 [1];  [1];  [1]
  1. Albuquerque, NM
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A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
7,670,933
Application Number:
11/866,748
OSTI ID:
978685
Country of Publication:
United States
Language:
English

References (4)

Nonpolar (11&1macr;0)a-Plane Gallium Nitride Thin Films Grown on (1&1macr;02)r-Plane Sapphire: Heteroepitaxy and Lateral Overgrowth journal
Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal–organic chemical vapour deposition journal November 2006
One-step lateral growth for reduction in defect density of a -plane GaN on r -sapphire substrate and its application in light emitters journal June 2007
Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density journal December 2006

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36 MATERIALS SCIENCE