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Title: Elastic Properties of Several Silicon Nitride Films

Abstract

We have measured the internal friction (Q{sup -1}) of amorphous silicon nitride (a-SiN{sub x}) films prepared by a variety of methods, including low-pressure chemical-vapor deposition (LPCVD), plasma-enhanced chemical-vapor deposition (PECVD), and hot-wire chemical-vapor deposition (HWCVD) from 0.5 K to room temperature. The measurements are made by depositing the films onto extremely high-Q silicon double paddle oscillator substrates with a resonant frequency of {approx}5500 Hz. We find the elastic properties of these a-SiN{sub x} films resemble those of amorphous silicon (a-Si) films, demonstrating considerable variation which depends on the film growth methods and post deposition annealing. The internal friction for most of the films shows a broad temperature-independent plateau below 30 K, characteristic of amorphous solids. The values of Q{sup -1}, however, vary from film to film in this plateau region by more than one order of magnitude. This has been observed in tetrehedrally covalent-bonded amorphous thin films, like a-Si, a-Ge, and a-C. The PECVD films have the highest Q{sup -1} just like a normal amorphous solid, while LPCVD films have an internal friction more than one order of magnitude lower. All the films show a reduction of Q{sup -1} after annealing at 800 C, even for the LPCVD films whichmore » were prepared at 850 C. This can be viewed as a reduction of structural disorder.« less

Authors:
; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
978490
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2007: Proceedings of the Materials Research Society Symposium, 9-13 April 2007, San Francisco, California; Materials Research Society Symposium Proceedings, Vol. 989; Related Information: Paper No. 0989-A22-01
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; ANNEALING; DEPOSITION; ELASTICITY; INTERNAL FRICTION; OSCILLATORS; SILICON; SILICON NITRIDES; SUBSTRATES; THIN FILMS; Solar Energy - Photovoltaics; Silicon Materials and Devices

Citation Formats

Liu, X, Metcalf, T H, Wang, Q, and Photiadis, D M. Elastic Properties of Several Silicon Nitride Films. United States: N. p., 2007. Web.
Liu, X, Metcalf, T H, Wang, Q, & Photiadis, D M. Elastic Properties of Several Silicon Nitride Films. United States.
Liu, X, Metcalf, T H, Wang, Q, and Photiadis, D M. 2007. "Elastic Properties of Several Silicon Nitride Films". United States.
@article{osti_978490,
title = {Elastic Properties of Several Silicon Nitride Films},
author = {Liu, X and Metcalf, T H and Wang, Q and Photiadis, D M},
abstractNote = {We have measured the internal friction (Q{sup -1}) of amorphous silicon nitride (a-SiN{sub x}) films prepared by a variety of methods, including low-pressure chemical-vapor deposition (LPCVD), plasma-enhanced chemical-vapor deposition (PECVD), and hot-wire chemical-vapor deposition (HWCVD) from 0.5 K to room temperature. The measurements are made by depositing the films onto extremely high-Q silicon double paddle oscillator substrates with a resonant frequency of {approx}5500 Hz. We find the elastic properties of these a-SiN{sub x} films resemble those of amorphous silicon (a-Si) films, demonstrating considerable variation which depends on the film growth methods and post deposition annealing. The internal friction for most of the films shows a broad temperature-independent plateau below 30 K, characteristic of amorphous solids. The values of Q{sup -1}, however, vary from film to film in this plateau region by more than one order of magnitude. This has been observed in tetrehedrally covalent-bonded amorphous thin films, like a-Si, a-Ge, and a-C. The PECVD films have the highest Q{sup -1} just like a normal amorphous solid, while LPCVD films have an internal friction more than one order of magnitude lower. All the films show a reduction of Q{sup -1} after annealing at 800 C, even for the LPCVD films which were prepared at 850 C. This can be viewed as a reduction of structural disorder.},
doi = {},
url = {https://www.osti.gov/biblio/978490}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2007},
month = {1}
}

Conference:
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